Diodes Incorporated BC817-16W-7

Name: BC817-16W-7
Brand: Diodes Incorporated
SKU: 3068912-BC817-16W-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC817-16W-7

Manufacturer:: Diodes Incorporated

Ventron No:: 3068912-BC817-16W-7

Description:: TRANS NPN 45V 0.5A SC70-3

ECAD Model:

Datasheet:: BC817-16W-7

Specifications

Diodes Incorporated BC817-16W-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC817-16W-7.

Factory Lead Time
13 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC817
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Max Frequency
100MHz
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
700mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Height
1mm
Length
2.2mm
Width
1.35mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC817-16W-7 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.With a collector emitter saturation voltage of 700mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 500mA volts at its maximum.

BC817-16W-7 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC817-16W-7 Applications
There are a lot of Diodes Incorporated
BC817-16W-7 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC817-16W-7 More Descriptions

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 45V 0.5A 200mW 3-Pin SOT-323 T/R
Transistor, NPN, 45V, 0.5A, 150DEG C, 0.2W;
General Purpose Transistor Sot323 T&r 3K
Small Signal Bipolar Transistors
French Electronic Distributor since 1988

Certification