Diodes Incorporated BC807-16-7-F

BC807-16-7-F Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Input voltage breakdown is available at 45V volts.Product comes in the supplier's device package SOT-23-3.There is a 45V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

BC807-16-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of SOT-23-3


BC807-16-7-F Applications
There are a lot of Diodes Incorporated
BC807-16-7-F applications of single BJT transistors.


Inverter
Interface
Driver
Muting