BC636

SIEMENS BC636

Part Number:
BC636
Manufacturer:
SIEMENS
Ventron No:
5631990-BC636
Description:
PNP Silicon AF Transistors (High current gain High collector current)
ECAD Model:
Datasheet:
BC636

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Description
Images are for reference only.See Product Specifications for product details.If you are interested to buy SIEMENS BC636.
BC636 More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Trans GP BJT PNP 45V 1A 3-Pin TO-92 Bulk - Boxed Product (Development Kits)
Bipolar Transistors - BJT TO-92 PNP GP AMP
Transistor; Transistor Type:Bipolar; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:-1A; Voltage Rating:-45V ;RoHS Compliant: Yes
TRANSISTOR, PNP, TO-92; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 1W; DC Collector Current: -1A; DC Current Gain hFE: 40hFE; Transistor Case Styl
TRANSISTOR, PNP, TO-92; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:1W; DC Collector Current:-1A; DC Current Gain hFE:40; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:-500mV; Continuous Collector Current Ic Max:1.5A; Current Ic Continuous a Max:1.5A; Current Ic hFE:150mA; Device Marking:BC636; Gain Bandwidth ft Typ:50MHz; Hfe Min:40; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:f; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Termination Type:Through Hole; Voltage Vcbo:45V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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