Vishay Semiconductor Diodes Division BAV103-GS08
- Part Number:
- BAV103-GS08
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Ventron No:
- 2824376-BAV103-GS08
- Description:
- DIODE GEN PURP 200V 250MA SOD80
- Datasheet:
- BAV103-GS08
Vishay Semiconductor Diodes Division BAV103-GS08 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division BAV103-GS08.
- Factory Lead Time11 Weeks
- Contact PlatingSilver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseDO-213AC, MINI-MELF, SOD-80
- Number of Pins2
- Diode Element MaterialSILICON
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2008
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSMD/SMT
- Max Operating Temperature175°C
- Min Operating Temperature-65°C
- Capacitance1.5pF
- Terminal PositionEND
- Terminal FormWRAP AROUND
- Base Part NumberBAV103
- Pin Count2
- Number of Elements1
- Voltage250V
- Element ConfigurationSingle
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Current1A
- Diode TypeStandard
- Current - Reverse Leakage @ Vr100nA @ 200V
- Power Dissipation500mW
- Voltage - Forward (Vf) (Max) @ If1V @ 100mA
- Case ConnectionISOLATED
- Forward Current250mA
- Max Reverse Leakage Current100nA
- Operating Temperature - Junction175°C Max
- Max Surge Current1A
- Current - Average Rectified (Io)250mA DC
- Forward Voltage1V
- Max Reverse Voltage (DC)200V
- Average Rectified Current250mA
- Reverse Recovery Time50 ns
- Peak Reverse Current15μA
- Max Repetitive Reverse Voltage (Vrrm)250V
- Capacitance @ Vr, F1.5pF @ 0V 1MHz
- Peak Non-Repetitive Surge Current1A
- Reverse Voltage200V
- Max Forward Surge Current (Ifsm)1A
- Recovery Time50 ns
- Max Junction Temperature (Tj)175°C
- Diameter1.6mm
- Height1.6mm
- Length3.683mm
- Width1.6mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BAV103-GS08 Overview
A reverse voltage of 200V is reasonable.A maximum reverse leakage current of 100nA volts is produced by this device.This device has an average rectified current of 250mA volts.As an unwanted derivative of its primary action, this electronic or electrical device produces 500mW heat.Forward current is allowed to reach a value of zero.Surge currents can be used up to 1A.A value of 1.5pF can be delivered by the device depending on its capacitance.Datasheets indicate that the peak reverse is 15μA.
BAV103-GS08 Features
a maximal reverse leakage current of 100nA volts
an average rectified current of 250mA volts
the peak reverse is 15μA
BAV103-GS08 Applications
There are a lot of Vishay Semiconductor Diodes Division
BAV103-GS08 applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
A reverse voltage of 200V is reasonable.A maximum reverse leakage current of 100nA volts is produced by this device.This device has an average rectified current of 250mA volts.As an unwanted derivative of its primary action, this electronic or electrical device produces 500mW heat.Forward current is allowed to reach a value of zero.Surge currents can be used up to 1A.A value of 1.5pF can be delivered by the device depending on its capacitance.Datasheets indicate that the peak reverse is 15μA.
BAV103-GS08 Features
a maximal reverse leakage current of 100nA volts
an average rectified current of 250mA volts
the peak reverse is 15μA
BAV103-GS08 Applications
There are a lot of Vishay Semiconductor Diodes Division
BAV103-GS08 applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
BAV103-GS08 More Descriptions
Rectifier Diode Small Signal Switching 250V 0.25A 50ns Automotive 2-Pin Mini-MELF SOD-80 T/R
Rectifier Diode, 1 Phase, 1 Element, 0.25A, 250V V(RRM), Silicon, DO-213AA
SILICON SWITCHING DIODE E PITAXIAL PLANAR MiniMELF GLASS CASE (SOD-80) 2.5 K PER 7" T/R
VISHAY - BAV103-GS08 - Small Signal Diode, Single, 250 V, 250 mA, 1 V, 50 ns, 1 A
BAV103 Series 250 V 500 mW High Voltage Small Signal Switching Diode - SOD-80
DIODE, SWITCHING, MINIMELF; Diode Type:Small Signal; Voltage, Vrrm:250V; Current, If AV:250mA; Current, Ifsm:1A; Temperature, Tj Max:175°C; Termination Type:SMD; Case Style:MiniMELF; No. of Pins:2
SWITCH DIODE, 250V, 250mA, SOD-80; Diode; SWITCH DIODE, 250V, 250mA, SOD-80; Diode Type:Small Signal; Forward Current If(AV):250mA; Repetitive Reverse Voltage Vrrm Max:250V; Forward Voltage VF Max:1V; Reverse Recovery Time trr Max:50ns; Forward Surge Current Ifsm Max:1A
Configuration = Single / Reverse Repetitive Voltage Max. (Vrrm) V = 250 / Peak Average Forward Current (If(AV)) mA = 250 / Forward Voltage (Vf) V = 1 / Peak Reverse Current nA = 100 / Reverse Recovery Time (trr) ns = 50 / Power Dissipation (Pd) mW = 500 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 175 / Package Type = SOD-80 / Pins = 2 / Mounting Type = SMD / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Capacitance pF = 1.5 / Thermal Resistance K/W = 500
Rectifier Diode, 1 Phase, 1 Element, 0.25A, 250V V(RRM), Silicon, DO-213AA
SILICON SWITCHING DIODE E PITAXIAL PLANAR MiniMELF GLASS CASE (SOD-80) 2.5 K PER 7" T/R
VISHAY - BAV103-GS08 - Small Signal Diode, Single, 250 V, 250 mA, 1 V, 50 ns, 1 A
BAV103 Series 250 V 500 mW High Voltage Small Signal Switching Diode - SOD-80
DIODE, SWITCHING, MINIMELF; Diode Type:Small Signal; Voltage, Vrrm:250V; Current, If AV:250mA; Current, Ifsm:1A; Temperature, Tj Max:175°C; Termination Type:SMD; Case Style:MiniMELF; No. of Pins:2
SWITCH DIODE, 250V, 250mA, SOD-80; Diode; SWITCH DIODE, 250V, 250mA, SOD-80; Diode Type:Small Signal; Forward Current If(AV):250mA; Repetitive Reverse Voltage Vrrm Max:250V; Forward Voltage VF Max:1V; Reverse Recovery Time trr Max:50ns; Forward Surge Current Ifsm Max:1A
Configuration = Single / Reverse Repetitive Voltage Max. (Vrrm) V = 250 / Peak Average Forward Current (If(AV)) mA = 250 / Forward Voltage (Vf) V = 1 / Peak Reverse Current nA = 100 / Reverse Recovery Time (trr) ns = 50 / Power Dissipation (Pd) mW = 500 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 175 / Package Type = SOD-80 / Pins = 2 / Mounting Type = SMD / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Capacitance pF = 1.5 / Thermal Resistance K/W = 500
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
25 September 2023
A Comparison of 2N7000 and BS170 N-Channel Mosfet Transistors
Ⅰ. What is a MOS field effect transistor?Ⅱ. Overview of 2N7000Ⅲ. Overview of BS170Ⅳ. 2N7000 vs BS170: PCB footprintsⅤ. 2N7000 vs BS170: Technical parametersⅥ. 2N7000 vs BS170: FeaturesⅦ.... -
26 September 2023
W25Q128JVSIQ Footprint, Features and Package
Ⅰ. W25Q128JVSIQ descriptionⅡ. W25Q128JVSIQ symbol and footprintⅢ. Technical parametersⅣ. Features of W25Q128JVSIQⅤ. Pin configuration of W25Q128JVSIQⅥ. Package of W25Q128JVSIQⅦ. What are the characteristics of the SPI interface of... -
26 September 2023
TDA7560 Audio Power Amplifier: Symbol, Features and Application
Ⅰ. Overview of TDA7560Ⅱ. Pin connection, symbol and footprint of TDA7560Ⅲ. Technical parametersⅣ. Features of TDA7560Ⅴ. Application of TDA7560Ⅵ. Are TDA7560 and TDA7851 interchangeable?Ⅶ. TDA7560 car power amplifier... -
27 September 2023
BC640 PNP Transistor: Features, Package and Other Details
Ⅰ. Overview of BC640Ⅱ. Symbol and footprint of BC640Ⅲ. Technical parametersⅣ. Features of BC640Ⅴ. Pinout and package of BC640Ⅵ. Application of BC640Ⅶ. How to optimize the performance of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.