BAS70-05-E3-18

Vishay Semiconductor Diodes Division BAS70-05-E3-18

Part Number:
BAS70-05-E3-18
Manufacturer:
Vishay Semiconductor Diodes Division
Ventron No:
2414175-BAS70-05-E3-18
Description:
DIODE ARRAY SCHOTTKY 70V SOT23
ECAD Model:
Datasheet:
BAS70-05-E3-18

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Specifications
Vishay Semiconductor Diodes Division BAS70-05-E3-18 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division BAS70-05-E3-18.
  • Factory Lead Time
    15 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Supplier Device Package
    SOT-23
  • Packaging
    Tape & Reel (TR)
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    125°C
  • Min Operating Temperature
    -55°C
  • Max Power Dissipation
    200mW
  • Element Configuration
    Common Cathode
  • Speed
    Small Signal =< 200mA (Io), Any Speed
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    100nA @ 50V
  • Voltage - Forward (Vf) (Max) @ If
    1V @ 15mA
  • Forward Current
    200mA
  • Max Reverse Leakage Current
    100nA
  • Operating Temperature - Junction
    125°C Max
  • Max Surge Current
    600mA
  • Voltage - DC Reverse (Vr) (Max)
    70V
  • Current - Average Rectified (Io)
    200mA
  • Forward Voltage
    1V
  • Max Reverse Voltage (DC)
    70V
  • Average Rectified Current
    200mA
  • Reverse Recovery Time
    5 ns
  • Peak Reverse Current
    100nA
  • Max Repetitive Reverse Voltage (Vrrm)
    70V
  • Peak Non-Repetitive Surge Current
    600mA
  • Diode Configuration
    1 Pair Common Cathode
  • Max Forward Surge Current (Ifsm)
    600mA
  • Recovery Time
    5 ns
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
BAS70-05-E3-18 Overview
This device will operate when the forward voltage is set to 1V.Surge currents should be monitored and prevented from exceeding 600mA.This device will operate when the forward voltage is set to 200mA.A reverse voltage peak of 100nA is used to power devices like this one.When reverse biased, its maximal reverse leakage current is 100nA, which is the current flowing from that semiconductor device.In this electronic or electrical device, the maximum amount of 200mW heat is generated (energy is wasted).

BAS70-05-E3-18 Features
1V forward voltage
a peak voltage of 100nA
a reverse voltage peak of 100nA


BAS70-05-E3-18 Applications
There are a lot of Vishay Semiconductor Diodes Division
BAS70-05-E3-18 applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
BAS70-05-E3-18 More Descriptions
Rectifier Diode Small Signal Schottky 70V 0.2A 5ns 3-Pin SOT-23 T/R
BAS70 Series 70 V 200 mA Surface Mount Small Signal Schottky Diode - SOT-23-3
DIODE ARR SCHOTT 70V 200MA SOT23
5Kw,170V 5%,unidir,axial Tvs Rohs Compliant: No
French Electronic Distributor since 1988
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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