NXP USA Inc. BAP64Q,125
- Part Number:
- BAP64Q,125
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2435176-BAP64Q,125
- Description:
- DIODE PIN 5TSOP
- Datasheet:
- BAP64Q,125
NXP USA Inc. BAP64Q,125 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BAP64Q,125.
- Factory Lead Time8 Weeks
- Surface MountYES
- Package / CaseSC-74A, SOT-753
- Diode Element MaterialSILICON
- PackagingTape & Reel (TR)
- Operating Temperature-65°C~150°C TJ
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- Terminal FinishTin (Sn)
- TechnologyPOSITIVE-INTRINSIC-NEGATIVE
- Terminal PositionDUAL
- Terminal FormGULL WING
- Base Part NumberBAP64Q
- Pin Count5
- Reference StandardIEC-60134
- JESD-30 CodeR-PDSO-G5
- Number of Elements4
- ConfigurationCOMPLEX
- Power Dissipation-Max125mW
- Diode TypePIN - 2 Pair CA CC
- ApplicationATTENUATOR
- Current - Max100mA
- Capacitance @ Vr, F0.35pF @ 20V 1MHz
- Voltage - Peak Reverse (Max)100V
- Reverse Test Voltage100V
- Source Url Status Check Date2013-06-14 00:00:00
- Frequency BandS B
- Diode Capacitance-Nom0.23pF
- Resistance @ If, F1.35Ohm @ 100mA 100MHz
- Diode Capacitance-Max0.35pF
- Minority Carrier Lifetime-Nom1.55 µs
- Diode Res Test Current100mA
- Diode Res Test Frequency100MHz
- RoHS StatusROHS3 Compliant
BAP64Q,125 Overview
Designed to operate from a maximum of 100mA volts, this device operates from a maximum current of 100mA volts.The maximum reverse voltage of this device is in accordance with its applicable specifications.Ideally, the reverse test voltage should be within 100V.
BAP64Q,125 Features
from a maximum current of 100mA volts
BAP64Q,125 Applications
There are a lot of NXP USA Inc.
BAP64Q,125 applications of RF diodes.
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
Low-loss, high-power limiters
Receiver protectors
UHF mixer
Sampling circuits
Modulators
Designed to operate from a maximum of 100mA volts, this device operates from a maximum current of 100mA volts.The maximum reverse voltage of this device is in accordance with its applicable specifications.Ideally, the reverse test voltage should be within 100V.
BAP64Q,125 Features
from a maximum current of 100mA volts
BAP64Q,125 Applications
There are a lot of NXP USA Inc.
BAP64Q,125 applications of RF diodes.
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
Low-loss, high-power limiters
Receiver protectors
UHF mixer
Sampling circuits
Modulators
BAP64Q,125 More Descriptions
Quad 125 mW 100 mA 100 V SMT PIN Diode Attenuator - SOT-753
Diode PIN Attenuator 100V 100mA 5-Pin TSOP T/R
Silicon PIN diode, TSOP5, RoHSNXP Semiconductors SCT
Pin Diode, 100V, 0.1A, Sot-753; Diode Configuration:Dual Common Anode; Resistance @ If:0.7Ohm; Breakdown Voltage Vbr:100V; Diode Case Style:Sot-753; No. Of Pins:5 Pin; Total Capacitance Ct:0.23Pf; Forward Current If(Av):100Ma; Rohs Compliant: Yes |Nxp BAP64Q,125
Diode PIN Attenuator 100V 100mA 5-Pin TSOP T/R
Silicon PIN diode, TSOP5, RoHSNXP Semiconductors SCT
Pin Diode, 100V, 0.1A, Sot-753; Diode Configuration:Dual Common Anode; Resistance @ If:0.7Ohm; Breakdown Voltage Vbr:100V; Diode Case Style:Sot-753; No. Of Pins:5 Pin; Total Capacitance Ct:0.23Pf; Forward Current If(Av):100Ma; Rohs Compliant: Yes |Nxp BAP64Q,125
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