BAP64-04W,115

NXP USA Inc. BAP64-04W,115

Part Number:
BAP64-04W,115
Manufacturer:
NXP USA Inc.
Ventron No:
2435151-BAP64-04W,115
Description:
DIODE PIN 100V 100MA SOT323
ECAD Model:
Datasheet:
BAP64-04W,115

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Specifications
NXP USA Inc. BAP64-04W,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BAP64-04W,115.
  • Factory Lead Time
    13 Weeks
  • Package / Case
    SC-70, SOT-323
  • Surface Mount
    YES
  • Diode Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.10.00.70
  • Subcategory
    PIN Diodes
  • Technology
    POSITIVE-INTRINSIC-NEGATIVE
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    BAP64-04
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Configuration
    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
  • Power Dissipation-Max
    240mW
  • Diode Type
    PIN - 1 Pair Series Connection
  • Application
    ATTENUATOR; SWITCHING
  • Current - Max
    100mA
  • Capacitance @ Vr, F
    0.35pF @ 20V 1MHz
  • Voltage - Peak Reverse (Max)
    100V
  • Breakdown Voltage-Min
    100V
  • Frequency Band
    S B
  • Diode Capacitance-Nom
    0.52pF
  • Resistance @ If, F
    1.35Ohm @ 100mA 100MHz
  • Diode Capacitance-Max
    0.35pF
  • Minority Carrier Lifetime-Nom
    1.55 µs
  • Diode Res Test Current
    0.5mA
  • Diode Res Test Frequency
    100MHz
  • RoHS Status
    ROHS3 Compliant
Description
BAP64-04W,115 Overview
RF diode operates at 100mA volts, which is the maximal current RF diode can handle.Device specifications specify a maximum reverse voltage of 100V for this device.RF diode is possible that this device may occasionally operate at RF diodes lowest breakdown voltage of 100V.

BAP64-04W,115 Features
from a maximum current of 100mA volts
at its lowest breakdown voltage of 100V


BAP64-04W,115 Applications
There are a lot of NXP USA Inc.
BAP64-04W,115 applications of RF diodes.


Ultra high-speed switching
Clamping circuits
Diode ring mixer
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
Low-loss, high-power limiters
BAP64-04W,115 More Descriptions
Dual 100mA 100V 1.1V@50mA SOT-323-3 Diodes - General Purpose ROHS
PIN DIODE, 100V, 0.1A, SOT-323; Diode Configuration: Dual Series; Resistance @ If: 0.7ohm; Breakdown Voltage Vbr: 100V; Diode Case Style: SOT-323; No. of Pins: 3 Pin; Total Capacitance Ct; Available until stocks are exhausted
Rf Diode, Full Reel; Diode Configuration:Dual Series; Resistance @ If:20Ohm; Reverse Voltage:100V; Diode Case Style:Sot-323; No. Of Pins:3 Pin; Diode Capacitance:0.35Pf; Forward Current:100Ma; Operating Temperature Max:150°C Rohs Compliant: Yes |Nxp BAP64-04W,115
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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