NXP USA Inc. BAP64-04W,115
- Part Number:
- BAP64-04W,115
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2435151-BAP64-04W,115
- Description:
- DIODE PIN 100V 100MA SOT323
- Datasheet:
- BAP64-04W,115
NXP USA Inc. BAP64-04W,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BAP64-04W,115.
- Factory Lead Time13 Weeks
- Package / CaseSC-70, SOT-323
- Surface MountYES
- Diode Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin (Sn)
- HTS Code8541.10.00.70
- SubcategoryPIN Diodes
- TechnologyPOSITIVE-INTRINSIC-NEGATIVE
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBAP64-04
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements2
- ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
- Power Dissipation-Max240mW
- Diode TypePIN - 1 Pair Series Connection
- ApplicationATTENUATOR; SWITCHING
- Current - Max100mA
- Capacitance @ Vr, F0.35pF @ 20V 1MHz
- Voltage - Peak Reverse (Max)100V
- Breakdown Voltage-Min100V
- Frequency BandS B
- Diode Capacitance-Nom0.52pF
- Resistance @ If, F1.35Ohm @ 100mA 100MHz
- Diode Capacitance-Max0.35pF
- Minority Carrier Lifetime-Nom1.55 µs
- Diode Res Test Current0.5mA
- Diode Res Test Frequency100MHz
- RoHS StatusROHS3 Compliant
BAP64-04W,115 Overview
RF diode operates at 100mA volts, which is the maximal current RF diode can handle.Device specifications specify a maximum reverse voltage of 100V for this device.RF diode is possible that this device may occasionally operate at RF diodes lowest breakdown voltage of 100V.
BAP64-04W,115 Features
from a maximum current of 100mA volts
at its lowest breakdown voltage of 100V
BAP64-04W,115 Applications
There are a lot of NXP USA Inc.
BAP64-04W,115 applications of RF diodes.
Ultra high-speed switching
Clamping circuits
Diode ring mixer
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
Low-loss, high-power limiters
RF diode operates at 100mA volts, which is the maximal current RF diode can handle.Device specifications specify a maximum reverse voltage of 100V for this device.RF diode is possible that this device may occasionally operate at RF diodes lowest breakdown voltage of 100V.
BAP64-04W,115 Features
from a maximum current of 100mA volts
at its lowest breakdown voltage of 100V
BAP64-04W,115 Applications
There are a lot of NXP USA Inc.
BAP64-04W,115 applications of RF diodes.
Ultra high-speed switching
Clamping circuits
Diode ring mixer
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
Low-loss, high-power limiters
BAP64-04W,115 More Descriptions
Dual 100mA 100V 1.1V@50mA SOT-323-3 Diodes - General Purpose ROHS
PIN DIODE, 100V, 0.1A, SOT-323; Diode Configuration: Dual Series; Resistance @ If: 0.7ohm; Breakdown Voltage Vbr: 100V; Diode Case Style: SOT-323; No. of Pins: 3 Pin; Total Capacitance Ct; Available until stocks are exhausted
Rf Diode, Full Reel; Diode Configuration:Dual Series; Resistance @ If:20Ohm; Reverse Voltage:100V; Diode Case Style:Sot-323; No. Of Pins:3 Pin; Diode Capacitance:0.35Pf; Forward Current:100Ma; Operating Temperature Max:150°C Rohs Compliant: Yes |Nxp BAP64-04W,115
PIN DIODE, 100V, 0.1A, SOT-323; Diode Configuration: Dual Series; Resistance @ If: 0.7ohm; Breakdown Voltage Vbr: 100V; Diode Case Style: SOT-323; No. of Pins: 3 Pin; Total Capacitance Ct; Available until stocks are exhausted
Rf Diode, Full Reel; Diode Configuration:Dual Series; Resistance @ If:20Ohm; Reverse Voltage:100V; Diode Case Style:Sot-323; No. Of Pins:3 Pin; Diode Capacitance:0.35Pf; Forward Current:100Ma; Operating Temperature Max:150°C Rohs Compliant: Yes |Nxp BAP64-04W,115
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