BAP64-03,115

NXP USA Inc. BAP64-03,115

Part Number:
BAP64-03,115
Manufacturer:
NXP USA Inc.
Ventron No:
2435144-BAP64-03,115
Description:
DIODE PIN 175V 100MA SOD-323
ECAD Model:
Datasheet:
BAP64-03

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Specifications
NXP USA Inc. BAP64-03,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BAP64-03,115.
  • Factory Lead Time
    13 Weeks
  • Package / Case
    SC-76, SOD-323
  • Surface Mount
    YES
  • Diode Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    1999
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    HIGH VOLTAGE
  • HTS Code
    8541.10.00.70
  • Subcategory
    PIN Diodes
  • Technology
    POSITIVE-INTRINSIC-NEGATIVE
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    BAP64
  • Pin Count
    2
  • JESD-30 Code
    R-PDSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    500mW
  • Diode Type
    PIN - Single
  • Application
    ATTENUATOR; SWITCHING
  • Current - Max
    100mA
  • Capacitance @ Vr, F
    0.35pF @ 20V 1MHz
  • Voltage - Peak Reverse (Max)
    175V
  • Breakdown Voltage-Min
    175V
  • Frequency Band
    S B
  • Diode Capacitance-Nom
    0.52pF
  • Resistance @ If, F
    1.35Ohm @ 100mA 100MHz
  • Diode Capacitance-Max
    0.35pF
  • Minority Carrier Lifetime-Nom
    1.55 µs
  • Diode Res Test Current
    0.5mA
  • Diode Res Test Frequency
    100MHz
  • RoHS Status
    ROHS3 Compliant
Description
BAP64-03,115 Overview
The maximum current of this device is 100mA.This device operates at a maximum reverse voltage of 175V in accordance with its applicable specifications.This device may operate at its lowest breakdown voltage of 175V on occasion.

BAP64-03,115 Features
from a maximum current of 100mA volts
at its lowest breakdown voltage of 175V


BAP64-03,115 Applications
There are a lot of NXP USA Inc.
BAP64-03,115 applications of RF diodes.


Clamping circuits
Diode ring mixer
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
Low-loss, high-power limiters
Receiver protectors
BAP64-03,115 More Descriptions
Diode PIN Attenuator/Switch 175V 100mA Automotive 2-Pin SOD-323 T/R
BAP64 Series 20 Ohm 3 GHz 500 mW Surface Mount Silicon Pin Diode - SOD-323
Diode, PIN, Ct=0.35 pF @ 1 V, SOD-323, Single,
RF DIODE PIN 175V 500MW SOD323
Silicon PIN diode, SOD323, RoHSNXP Semiconductors SCT
Silicon Pin Diode; Diode Configuration:Single; Resistance @ If:0.7Ohm; Reverse Voltage:175V; Diode Case Style:Sod-323; No. Of Pins:2 Pin; Diode Capacitance:0.35Pf; Forward Current:100Ma; Operating Temperature Max:150°C Rohs Compliant: Yes |Nxp BAP64-03,115
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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