NXP USA Inc. BAP64-03,115
- Part Number:
- BAP64-03,115
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2435144-BAP64-03,115
- Description:
- DIODE PIN 175V 100MA SOD-323
- Datasheet:
- BAP64-03
NXP USA Inc. BAP64-03,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BAP64-03,115.
- Factory Lead Time13 Weeks
- Package / CaseSC-76, SOD-323
- Surface MountYES
- Diode Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1999
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishTin (Sn)
- Additional FeatureHIGH VOLTAGE
- HTS Code8541.10.00.70
- SubcategoryPIN Diodes
- TechnologyPOSITIVE-INTRINSIC-NEGATIVE
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBAP64
- Pin Count2
- JESD-30 CodeR-PDSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max500mW
- Diode TypePIN - Single
- ApplicationATTENUATOR; SWITCHING
- Current - Max100mA
- Capacitance @ Vr, F0.35pF @ 20V 1MHz
- Voltage - Peak Reverse (Max)175V
- Breakdown Voltage-Min175V
- Frequency BandS B
- Diode Capacitance-Nom0.52pF
- Resistance @ If, F1.35Ohm @ 100mA 100MHz
- Diode Capacitance-Max0.35pF
- Minority Carrier Lifetime-Nom1.55 µs
- Diode Res Test Current0.5mA
- Diode Res Test Frequency100MHz
- RoHS StatusROHS3 Compliant
BAP64-03,115 Overview
The maximum current of this device is 100mA.This device operates at a maximum reverse voltage of 175V in accordance with its applicable specifications.This device may operate at its lowest breakdown voltage of 175V on occasion.
BAP64-03,115 Features
from a maximum current of 100mA volts
at its lowest breakdown voltage of 175V
BAP64-03,115 Applications
There are a lot of NXP USA Inc.
BAP64-03,115 applications of RF diodes.
Clamping circuits
Diode ring mixer
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
Low-loss, high-power limiters
Receiver protectors
The maximum current of this device is 100mA.This device operates at a maximum reverse voltage of 175V in accordance with its applicable specifications.This device may operate at its lowest breakdown voltage of 175V on occasion.
BAP64-03,115 Features
from a maximum current of 100mA volts
at its lowest breakdown voltage of 175V
BAP64-03,115 Applications
There are a lot of NXP USA Inc.
BAP64-03,115 applications of RF diodes.
Clamping circuits
Diode ring mixer
RF detector
RF voltage doubler
Wearables
Smart metering
Set top boxes
RF attenuators and switches
Low-loss, high-power limiters
Receiver protectors
BAP64-03,115 More Descriptions
Diode PIN Attenuator/Switch 175V 100mA Automotive 2-Pin SOD-323 T/R
BAP64 Series 20 Ohm 3 GHz 500 mW Surface Mount Silicon Pin Diode - SOD-323
Diode, PIN, Ct=0.35 pF @ 1 V, SOD-323, Single,
RF DIODE PIN 175V 500MW SOD323
Silicon PIN diode, SOD323, RoHSNXP Semiconductors SCT
Silicon Pin Diode; Diode Configuration:Single; Resistance @ If:0.7Ohm; Reverse Voltage:175V; Diode Case Style:Sod-323; No. Of Pins:2 Pin; Diode Capacitance:0.35Pf; Forward Current:100Ma; Operating Temperature Max:150°C Rohs Compliant: Yes |Nxp BAP64-03,115
BAP64 Series 20 Ohm 3 GHz 500 mW Surface Mount Silicon Pin Diode - SOD-323
Diode, PIN, Ct=0.35 pF @ 1 V, SOD-323, Single,
RF DIODE PIN 175V 500MW SOD323
Silicon PIN diode, SOD323, RoHSNXP Semiconductors SCT
Silicon Pin Diode; Diode Configuration:Single; Resistance @ If:0.7Ohm; Reverse Voltage:175V; Diode Case Style:Sod-323; No. Of Pins:2 Pin; Diode Capacitance:0.35Pf; Forward Current:100Ma; Operating Temperature Max:150°C Rohs Compliant: Yes |Nxp BAP64-03,115
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