Alpha & Omega Semiconductor Inc. AO3409
- Part Number:
- AO3409
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Ventron No:
- 3586053-AO3409
- Description:
- MOSFET P-CH 30V 2.6A SOT23
- Datasheet:
- AO3409
Alpha & Omega Semiconductor Inc. AO3409 technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AO3409.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max1.4W Ta
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.4W
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs130m Ω @ 2.6A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds370pF @ 15V
- Current - Continuous Drain (Id) @ 25°C2.6A Ta
- Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)2.6A
- Gate to Source Voltage (Vgs)20V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
AO3409 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 370pF @ 15V.This device conducts a continuous drain current (ID) of 2.6A, which is the maximum continuous current transistor can conduct.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
AO3409 Features
a continuous drain current (ID) of 2.6A
a 30V drain to source voltage (Vdss)
AO3409 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO3409 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 370pF @ 15V.This device conducts a continuous drain current (ID) of 2.6A, which is the maximum continuous current transistor can conduct.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
AO3409 Features
a continuous drain current (ID) of 2.6A
a 30V drain to source voltage (Vdss)
AO3409 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AO3409 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
AO3409 More Descriptions
TEXAS INSTRUMENTS DRV632PW Differential Line Driver, Adjustable Gain, 2 Drivers
Trans MOSFET P-CH 30V 2.6A 3-Pin SOT-23
30V 2.6A 130mΩ@10V,2.6A 1.4W P Channel SOT-23 MOSFETs ROHS
30V P-Channel MOSFET, SOT23-3, RoHSAlpha & Omega Semiconductor SCT
Small Signal Field-Effect Transistor, 2.6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
Trans MOSFET P-CH 30V 2.6A 3-Pin SOT-23
30V 2.6A 130mΩ@10V,2.6A 1.4W P Channel SOT-23 MOSFETs ROHS
30V P-Channel MOSFET, SOT23-3, RoHSAlpha & Omega Semiconductor SCT
Small Signal Field-Effect Transistor, 2.6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
The three parts on the right have similar specifications to AO3409.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal PositionTerminal FormPin CountNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)Radiation HardeningRoHS StatusLead FreeSurface MountJESD-30 CodeQualification StatusDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinFeedback Cap-Max (Crss)Reach Compliance CodeView Compare
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AO340916 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON-55°C~150°C TJTape & Reel (TR)2009Not For New Designs1 (Unlimited)3EAR99MOSFET (Metal Oxide)DUALGULL WING31SINGLE WITH BUILT-IN DIODE1.4W TaENHANCEMENT MODE1.4WP-ChannelSWITCHING130m Ω @ 2.6A, 10V3V @ 250μA370pF @ 15V2.6A Ta9nC @ 10V30V4.5V 10V±20V2.6A20VNoROHS3 CompliantLead Free---------
-
18 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)2003Active1 (Unlimited)--MOSFET (Metal Oxide)-----1.4W Ta--P-Channel-52m Ω @ 4.1A, 10V2.4V @ 250μA520pF @ 15V4.1A Ta11nC @ 10V30V4.5V 10V±20V---ROHS3 Compliant---------
-
--Surface MountTO-236-3, SC-59, SOT-23-3-SILICON-55°C~150°C TJTape & Reel (TR)2005Obsolete1 (Unlimited)3EAR99MOSFET (Metal Oxide)DUALGULL WING31SINGLE WITH BUILT-IN DIODE1.4W TaENHANCEMENT MODE-N-ChannelSWITCHING31m Ω @ 5A, 10V2.4V @ 250μA310pF @ 15V5A Ta6.3nC @ 10V30V4.5V 10V±20V---Non-RoHS Compliant-YESR-PDSO-G3Not Qualified5A0.031Ohm30V50 pF-
-
--Surface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-----1.4W Ta--P-Channel-130m Ω @ 2.6A, 10V3V @ 250μA370pF @ 15V2.6A Ta9nC @ 10V30V4.5V 10V±20V------------compliant
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