IDT, Integrated Device Technology Inc 71V3576S133PFG8
- Part Number:
- 71V3576S133PFG8
- Manufacturer:
- IDT, Integrated Device Technology Inc
- Ventron No:
- 3233939-71V3576S133PFG8
- Description:
- IC SRAM 4.5MBIT 133MHZ 100TQFP
- ECAD Model:
-
- Datasheet:
- 71V3576S133PFG8
IDT, Integrated Device Technology Inc 71V3576S133PFG8 technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 71V3576S133PFG8.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case100-LQFP
- Operating Temperature0°C~70°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySRAM - Synchronous, SDR
- Voltage - Supply3.135V~3.465V
- Base Part NumberIDT71V3576
- Memory Size4.5Mb 128K x 36
- Memory TypeVolatile
- Clock Frequency133MHz
- Access Time4.2ns
- Memory FormatSRAM
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
71V3576S133PFG8 Overview
The product in question has a wide operating temperature range of 0°C to 70°C, making it suitable for use in various environments. It is packaged in Tape & Reel (TR) format, ensuring ease of handling and protection during transportation. The product is currently in active status, indicating its availability for purchase. With a Moisture Sensitivity Level (MSL) of 3 (168 Hours), the product has a low risk of moisture damage during storage and handling. It requires a voltage supply of 3.135V to 3.465V and is classified as a Volatile memory type. The clock frequency is 133MHz, with an access time of 4.2ns. The product is designed in SRAM memory format and is compliant with ROHS3 regulations.
71V3576S133PFG8 Features
Package / Case: 100-LQFP
71V3576S133PFG8 Applications
There are a lot of Renesas Electronics America Inc.
71V3576S133PFG8 Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
The product in question has a wide operating temperature range of 0°C to 70°C, making it suitable for use in various environments. It is packaged in Tape & Reel (TR) format, ensuring ease of handling and protection during transportation. The product is currently in active status, indicating its availability for purchase. With a Moisture Sensitivity Level (MSL) of 3 (168 Hours), the product has a low risk of moisture damage during storage and handling. It requires a voltage supply of 3.135V to 3.465V and is classified as a Volatile memory type. The clock frequency is 133MHz, with an access time of 4.2ns. The product is designed in SRAM memory format and is compliant with ROHS3 regulations.
71V3576S133PFG8 Features
Package / Case: 100-LQFP
71V3576S133PFG8 Applications
There are a lot of Renesas Electronics America Inc.
71V3576S133PFG8 Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
71V3576S133PFG8 More Descriptions
SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 4.2ns 100-Pin TQFP T/R
Synchronous Active GULL WING 3-STATE (Memory Format) Memory 70C 3.465V 4.5Mb 250mA
3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O
Cache SRAM, 128KX36, 4.2ns, CMOS, PQFP100
IC SRAM 4.5MBIT PARALLEL 100TQFP
SRAM 4M 3.3V I/O PBSRAM SLOW X
Synchronous Active GULL WING 3-STATE (Memory Format) Memory 70C 3.465V 4.5Mb 250mA
3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O
Cache SRAM, 128KX36, 4.2ns, CMOS, PQFP100
IC SRAM 4.5MBIT PARALLEL 100TQFP
SRAM 4M 3.3V I/O PBSRAM SLOW X
The three parts on the right have similar specifications to 71V3576S133PFG8.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyBase Part NumberMemory SizeMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceRoHS StatusSupplier Device PackageWrite Cycle Time - Word, PageView Compare
-
71V3576S133PFG813 WeeksSurface Mount100-LQFP0°C~70°C TATape & Reel (TR)Active3 (168 Hours)SRAM - Synchronous, SDR3.135V~3.465VIDT71V35764.5Mb 128K x 36Volatile133MHz4.2nsSRAMParallelROHS3 Compliant--- -
12 WeeksSurface Mount64-LQFP0°C~70°C TATrayActive3 (168 Hours)SRAM - Dual Port, Asynchronous3V~3.6VIDT71V32116Kb 2K x 8Volatile-25nsSRAMParallelROHS3 Compliant64-TQFP (10x10)25ns
-
-Surface Mount64-LQFP0°C~70°C TATrayObsolete3 (168 Hours)SRAM - Dual Port, Asynchronous3V~3.6VIDT71V308Kb 1K x 8Volatile-35nsSRAMParallelNon-RoHS Compliant64-TQFP (10x10)35ns
-
12 WeeksSurface Mount64-LQFP0°C~70°C TATrayActive3 (168 Hours)SRAM - Dual Port, Asynchronous3V~3.6VIDT71V32116Kb 2K x 8Volatile--SRAMParallelROHS3 Compliant-25ns
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