IDT, Integrated Device Technology Inc 71V3559S80BG
- Part Number:
- 71V3559S80BG
- Manufacturer:
- IDT, Integrated Device Technology Inc
- Ventron No:
- 3233738-71V3559S80BG
- Description:
- IC SRAM 4.5MBIT 8NS 119BGA
- ECAD Model:
-
- Datasheet:
- IDT Suffixes
IDT, Integrated Device Technology Inc 71V3559S80BG technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 71V3559S80BG.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case119-BGA
- Operating Temperature0°C~70°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySRAM - Synchronous, SDR (ZBT)
- Voltage - Supply3.135V~3.465V
- Base Part NumberIDT71V3559
- Memory Size4.5Mb 256K x 18
- Memory TypeVolatile
- Access Time8ns
- Memory FormatSRAM
- Memory InterfaceParallel
- RoHS StatusNon-RoHS Compliant
71V3559S80BG Overview
The operating temperature for this product is 0°C to 70°C and it is packaged in a tray. The part status is active, indicating that it is currently being produced and sold. The technology used is SRAM - Synchronous, specifically SDR (ZBT), which stands for Zero Bus Turnaround. The voltage supply for this product is 3.135V to 3.465V. It has a memory size of 4.5Mb, with a configuration of 256K x 18. This is a volatile memory, meaning that it requires power to retain data. The access time for this product is 8ns, which is the time it takes to retrieve data from the memory. It is formatted as SRAM and uses a parallel interface.
71V3559S80BG Features
Package / Case: 119-BGA
71V3559S80BG Applications
There are a lot of Renesas Electronics America Inc.
71V3559S80BG Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
The operating temperature for this product is 0°C to 70°C and it is packaged in a tray. The part status is active, indicating that it is currently being produced and sold. The technology used is SRAM - Synchronous, specifically SDR (ZBT), which stands for Zero Bus Turnaround. The voltage supply for this product is 3.135V to 3.465V. It has a memory size of 4.5Mb, with a configuration of 256K x 18. This is a volatile memory, meaning that it requires power to retain data. The access time for this product is 8ns, which is the time it takes to retrieve data from the memory. It is formatted as SRAM and uses a parallel interface.
71V3559S80BG Features
Package / Case: 119-BGA
71V3559S80BG Applications
There are a lot of Renesas Electronics America Inc.
71V3559S80BG Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
71V3559S80BG More Descriptions
SRAM Chip Sync Single 3.3V 4.5M-Bit 256K x 18 8ns 119-Pin BGA
Synchronous Active BALL 3-STATE (Memory Format) Memory 70C 3.465V 4.5Mb 250mA
3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O
IC SRAM 4.5MBIT PARALLEL 119PBGA
71V3558 - 256K X 18 3.3V SYNCHRO
Synchronous Active BALL 3-STATE (Memory Format) Memory 70C 3.465V 4.5Mb 250mA
3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O
IC SRAM 4.5MBIT PARALLEL 119PBGA
71V3558 - 256K X 18 3.3V SYNCHRO
The three parts on the right have similar specifications to 71V3559S80BG.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyBase Part NumberMemory SizeMemory TypeAccess TimeMemory FormatMemory InterfaceRoHS StatusSupplier Device PackageWrite Cycle Time - Word, PageView Compare
-
71V3559S80BG13 WeeksSurface Mount119-BGA0°C~70°C TATrayActive3 (168 Hours)SRAM - Synchronous, SDR (ZBT)3.135V~3.465VIDT71V35594.5Mb 256K x 18Volatile8nsSRAMParallelNon-RoHS Compliant--- -
-Surface Mount64-LQFP0°C~70°C TATrayObsolete3 (168 Hours)SRAM - Dual Port, Asynchronous3V~3.6VIDT71V308Kb 1K x 8Volatile35nsSRAMParallelNon-RoHS Compliant64-TQFP (10x10)35ns
-
-Surface Mount64-LQFP-40°C~85°C TATrayObsolete3 (168 Hours)SRAM - Dual Port, Asynchronous3V~3.6VIDT71V308Kb 1K x 8Volatile35nsSRAMParallelNon-RoHS Compliant64-TQFP (10x10)35ns
-
12 WeeksSurface Mount64-LQFP0°C~70°C TATrayActive3 (168 Hours)SRAM - Dual Port, Asynchronous3V~3.6VIDT71V32116Kb 2K x 8Volatile-SRAMParallelROHS3 Compliant-25ns
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