IDT, Integrated Device Technology Inc 71016S12YG
- Part Number:
- 71016S12YG
- Manufacturer:
- IDT, Integrated Device Technology Inc
- Ventron No:
- 3232622-71016S12YG
- Description:
- IC SRAM 1MBIT 12NS 44SOJ
- Datasheet:
- 71016S12YG
IDT, Integrated Device Technology Inc 71016S12YG technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 71016S12YG.
- Factory Lead Time14 Weeks
- Mounting TypeSurface Mount
- Package / Case44-BSOJ (0.400, 10.16mm Width)
- Operating Temperature0°C~70°C TA
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySRAM - Asynchronous
- Voltage - Supply4.5V~5.5V
- Base Part NumberIDT71016
- Memory Size1Mb 64K x 16
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page12ns
- RoHS StatusROHS3 Compliant
71016S12YG Overview
The 44-BSOJ (0.400, 10.16mm Width) package/case is designed for the SRAM - Asynchronous technology and has a voltage supply range of 4.5V~5.5V. The packaging for this product is a tube, ensuring safe and efficient handling during transportation. With a Moisture Sensitivity Level of 3 (168 Hours), this product can withstand moderate levels of humidity for up to 168 hours. The memory size is 1Mb 64K x 16, making it suitable for high-performance applications. As a volatile memory type, it offers fast access times and low power consumption. The memory format is SRAM and the interface is parallel, providing a high-speed data transfer rate. Additionally, the write cycle time for both word and page is 12ns, making it ideal for time-sensitive operations.
71016S12YG Features
Package / Case: 44-BSOJ (0.400, 10.16mm Width)
71016S12YG Applications
There are a lot of Renesas Electronics America Inc.
71016S12YG Memory applications.
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
The 44-BSOJ (0.400, 10.16mm Width) package/case is designed for the SRAM - Asynchronous technology and has a voltage supply range of 4.5V~5.5V. The packaging for this product is a tube, ensuring safe and efficient handling during transportation. With a Moisture Sensitivity Level of 3 (168 Hours), this product can withstand moderate levels of humidity for up to 168 hours. The memory size is 1Mb 64K x 16, making it suitable for high-performance applications. As a volatile memory type, it offers fast access times and low power consumption. The memory format is SRAM and the interface is parallel, providing a high-speed data transfer rate. Additionally, the write cycle time for both word and page is 12ns, making it ideal for time-sensitive operations.
71016S12YG Features
Package / Case: 44-BSOJ (0.400, 10.16mm Width)
71016S12YG Applications
There are a lot of Renesas Electronics America Inc.
71016S12YG Memory applications.
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
71016S12YG More Descriptions
SRAM Chip Async Single 5V 1M-Bit 64K x 16 12ns 44-Pin SOJ Tray
SRAM 64Kx16 ASYNCHRONOUS 5.0V STATIC RAM
IC FLASH 32M SPI 104MHZ 8SOIC
IC SRAM 1MBIT PARALLEL 44SOJ
1MB (64KX16) FAST ASYNC SRAM
SOJ-44 SRAM ROHS
SRAM 64Kx16 ASYNCHRONOUS 5.0V STATIC RAM
IC FLASH 32M SPI 104MHZ 8SOIC
IC SRAM 1MBIT PARALLEL 44SOJ
1MB (64KX16) FAST ASYNC SRAM
SOJ-44 SRAM ROHS
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