| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
IXTM12N45 |
IXTM11N80 |
| Manufacturer: |
IXYS |
IXYS |
| Description: |
12 AMPS, 450-500V, 0.4OM/0.5OM |
MegaMOSFET |
| Quantity Available: |
Available |
Available |
| Datasheets: |
-
|
-
|
| Mounting Type |
- |
Through Hole |
| Package / Case |
- |
TO-204AA, TO-3 |
| Surface Mount |
- |
NO |
| Transistor Element Material |
- |
SILICON |
| Operating Temperature |
- |
-55°C~150°C TJ |
| Packaging |
- |
Tube |
| Series |
- |
GigaMOS™ |
| Published |
- |
2012 |
| Pbfree Code |
- |
yes |
| Part Status |
- |
Obsolete |
| Moisture Sensitivity Level (MSL) |
- |
1 (Unlimited) |
| Number of Terminations |
- |
2 |
| Subcategory |
- |
FET General Purpose Power |
| Technology |
- |
MOSFET (Metal Oxide) |
| Terminal Position |
- |
BOTTOM |
| Terminal Form |
- |
PIN/PEG |
| Peak Reflow Temperature (Cel) |
- |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
- |
NOT SPECIFIED |
| JESD-30 Code |
- |
O-MBFM-P2 |
| Qualification Status |
- |
Not Qualified |
| Number of Elements |
- |
1 |
| Configuration |
- |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max |
- |
300W Tc |
| Operating Mode |
- |
ENHANCEMENT MODE |
| Case Connection |
- |
DRAIN |
| FET Type |
- |
N-Channel |
| Transistor Application |
- |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
- |
950m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id |
- |
4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
- |
4500pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
- |
11A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
- |
170nC @ 10V |
| Drain to Source Voltage (Vdss) |
- |
800V |
| Drive Voltage (Max Rds On,Min Rds On) |
- |
10V |
| Vgs (Max) |
- |
±20V |
| Drain Current-Max (Abs) (ID) |
- |
11A |
| Drain-source On Resistance-Max |
- |
0.95Ohm |
| Pulsed Drain Current-Max (IDM) |
- |
44A |
| DS Breakdown Voltage-Min |
- |
800V |
| RoHS Status |
- |
ROHS3 Compliant |
| Submit RFQ: |
Submit |
Submit |
