Part Number: IXFH9N80 vs IXFH23N80Q
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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|---|---|---|
| Part Number: | IXFH9N80 | IXFH23N80Q |
| Manufacturer: | IXYS | IXYS |
| Description: | MOSFET N-CH 800V 9A TO-247 | MOSFET N-CH 800V 23A TO-247 |
| Quantity Available: | Available | Available |
| Datasheets: | - | - |
| Factory Lead Time | 8 Weeks | - |
| Mount | Through Hole | Through Hole |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 |
| Number of Pins | 3 | 3 |
| Transistor Element Material | SILICON | SILICON |
| Operating Temperature | -55°C~150°C TJ | -55°C~150°C TJ |
| Packaging | Tube | Tube |
| Series | HiPerFET™ | HiPerFET™ |
| Published | 1997 | 2004 |
| Pbfree Code | yes | yes |
| Part Status | Not For New Designs | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Number of Terminations | 3 | 3 |
| Additional Feature | AVALANCHE RATED | - |
| Subcategory | FET General Purpose Power | - |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | NOT SPECIFIED |
| Pin Count | 3 | 3 |
| Qualification Status | Not Qualified | Not Qualified |
| Number of Elements | 1 | 1 |
| Power Dissipation-Max | 180W Tc | 500W Tc |
| Element Configuration | Single | Single |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Power Dissipation | 180W | 500W |
| Case Connection | DRAIN | DRAIN |
| FET Type | N-Channel | N-Channel |
| Transistor Application | SWITCHING | - |
| Rds On (Max) @ Id, Vgs | 900m Ω @ 500mA, 10V | 420m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 2.5mA | 4.5V @ 3mA |
| Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 25V | 4900pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 9A Tc | 23A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V | 130nC @ 10V |
| Rise Time | 15ns | 27ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V | 10V |
| Vgs (Max) | ±20V | ±30V |
| Fall Time (Typ) | 35 ns | 14 ns |
| Turn-Off Delay Time | 70 ns | 74 ns |
| Continuous Drain Current (ID) | 9A | 23A |
| Gate to Source Voltage (Vgs) | 20V | 30V |
| Drain Current-Max (Abs) (ID) | 9A | - |
| Drain-source On Resistance-Max | 0.9Ohm | 0.4Ohm |
| Drain to Source Breakdown Voltage | 800V | 800V |
| Recovery Time | 250 ns | - |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Reach Compliance Code | - | unknown |
| JEDEC-95 Code | - | TO-247AD |
| Pulsed Drain Current-Max (IDM) | - | 92A |
| Avalanche Energy Rating (Eas) | - | 1500 mJ |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
|---|---|---|---|---|
 |
IXFH23N60Q | IXYS | MOSFET N-CH 600V 23A TO-247 | Compare |
|
IXFH230N10T | IXYS | MOSFET N-CH 100V 230A TO-247 | Compare |
