Part Number: STGB10NB40LZT4 vs STGB20N40LZ

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Part Number: STGB10NB40LZT4 STGB20N40LZ
Manufacturer: STMicroelectronics STMicroelectronics
Description: IGBT 440V 20A 150W D2PAK IGBT 390V 25A 150W D2PAK
Quantity Available: Available Available
Datasheets: - -
Lifecycle Status ACTIVE (Last Updated: 8 months ago) ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 8 Weeks 8 Weeks
Mount Surface Mount Surface Mount
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads Tab), TO-263AB TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins 3 3
Weight 2.240009g -
Transistor Element Material SILICON -
Operating Temperature -55°C~175°C TJ -55°C~175°C TJ
Packaging Tape & Reel (TR) Cut Tape (CT)
Series Automotive, AEC-Q101, PowerMESH™ Automotive, AEC-Q101, PowerMESH™
JESD-609 Code e3 -
Part Status Active Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 2 -
ECCN Code EAR99 EAR99
Terminal Finish Matte Tin (Sn) - annealed -
Subcategory Insulated Gate BIP Transistors -
Voltage - Rated DC 18V -
Max Power Dissipation 150W 150W
Terminal Form GULL WING -
Peak Reflow Temperature (Cel) 245 -
Current Rating 20A -
Time@Peak Reflow Temperature-Max (s) 30 -
Base Part Number STGB10 STGB20
Pin Count 3 -
JESD-30 Code R-PSSO-G2 -
Number of Elements 1 -
Element Configuration Single Single
Power Dissipation 150W 150W
Case Connection COLLECTOR -
Input Type Standard Logic
Transistor Application AUTOMOTIVE IGNITION -
Rise Time 270ns -
Polarity/Channel Type N-CHANNEL -
Collector Emitter Voltage (VCEO) 1.8V 425V
Max Collector Current 20A 25A
Collector Emitter Breakdown Voltage 440V 390V
Collector Emitter Saturation Voltage 1.2V 1.5V
Max Breakdown Voltage 440V 390V
Turn On Time 1570 ns -
Test Condition 328V, 10A, 1k Ω, 5V 300V, 10A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic 1.8V @ 4.5V, 10A 1.6V @ 4V, 6A
Continuous Collector Current 20A -
Turn Off Time-Nom (toff) 12000 ns -
Gate Charge 28nC 24nC
Current - Collector Pulsed (Icm) 40A 40A
Td (on/off) @ 25°C 1.3μs/8μs 700ns/4.3μs
Switching Energy 2.4mJ (on), 5mJ (off) -
Gate-Emitter Thr Voltage-Max 2.2V -
Height 4.6mm 4.6mm
Length 10.4mm 10.4mm
Width 9.35mm 9.35mm
Radiation Hardening No No
RoHS Status ROHS3 Compliant ROHS3 Compliant
Lead Free Lead Free Lead Free
Turn On Delay Time - 700 ns
Turn-Off Delay Time - 4.3 μs
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