Vishay Semiconductor Diodes Division 3KBP02M-E4/45
- Part Number:
- 3KBP02M-E4/45
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Ventron No:
- 2412552-3KBP02M-E4/45
- Description:
- DIODE BRIDGE 3A 200V KBPM
- Datasheet:
- 3KBP005,01,02,04,06,08M
Vishay Semiconductor Diodes Division 3KBP02M-E4/45 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division 3KBP02M-E4/45.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case4-SIP, KBPM
- Number of Pins4
- Weight1.894996g
- Diode Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2011
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- TerminationThrough Hole
- ECCN CodeEAR99
- Terminal FinishSilver (Ag)
- Additional FeatureUL RECOGNIZED
- SubcategoryBridge Rectifier Diodes
- TechnologyStandard
- Terminal FormWIRE
- Pin Count4
- Number of Elements4
- Element ConfigurationSingle
- Diode TypeSingle Phase
- Current - Reverse Leakage @ Vr5μA @ 200V
- Voltage - Forward (Vf) (Max) @ If1.05V @ 3A
- Case ConnectionISOLATED
- Max Surge Current80A
- Output Current-Max3A
- Current - Average Rectified (Io)3A
- Forward Voltage1.05V
- Number of Phases1
- Peak Reverse Current5μA
- Max Repetitive Reverse Voltage (Vrrm)200V
- Reverse Voltage (DC)140V
- Height11.68mm
- Length15.24mm
- Width5.08mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
3KBP02M-E4/45 Overview
The device has 4 pins.The component is available as a 4-SIP, KBPM package.A Through Hole mounting method is used for the device.In order for rectifier to operate normally, rectifier must be kept at a temperature of -55°C~150°C TJ.A maximum voltage of 3A can be supported by it.Ensure that surge current does not exceed 80A.Using a reverse voltage of 5μA, this device can be powered.
3KBP02M-E4/45 Features
4 pin count
4-SIP, KBPM package
operating at a temperature of -55°C~150°C TJ
the maximum output voltage of 3A
peak reverse voltage of 5μA
a reverse voltage peak of 5μA
3KBP02M-E4/45 Applications
There are a lot of Vishay Semiconductor Diodes Division
3KBP02M-E4/45 applications of bridge rectifiers.
Low thermal resistance
Extremely robust construction
Fuse-in-glass diodes design
Electrically isolated aluminum case
Motor controls – Low Voltage and Medium Voltage converters
SCR power bridges for solid state starters
SCR and diode based input rectifiers
Crowbar systems for motor drives
Wind power (alternative energy) – Converters available as diodes, SCRs or IGBTs
Transportation – Traction rectifiers and auxiliary rectifiers
The device has 4 pins.The component is available as a 4-SIP, KBPM package.A Through Hole mounting method is used for the device.In order for rectifier to operate normally, rectifier must be kept at a temperature of -55°C~150°C TJ.A maximum voltage of 3A can be supported by it.Ensure that surge current does not exceed 80A.Using a reverse voltage of 5μA, this device can be powered.
3KBP02M-E4/45 Features
4 pin count
4-SIP, KBPM package
operating at a temperature of -55°C~150°C TJ
the maximum output voltage of 3A
peak reverse voltage of 5μA
a reverse voltage peak of 5μA
3KBP02M-E4/45 Applications
There are a lot of Vishay Semiconductor Diodes Division
3KBP02M-E4/45 applications of bridge rectifiers.
Low thermal resistance
Extremely robust construction
Fuse-in-glass diodes design
Electrically isolated aluminum case
Motor controls – Low Voltage and Medium Voltage converters
SCR power bridges for solid state starters
SCR and diode based input rectifiers
Crowbar systems for motor drives
Wind power (alternative energy) – Converters available as diodes, SCRs or IGBTs
Transportation – Traction rectifiers and auxiliary rectifiers
3KBP02M-E4/45 More Descriptions
DIODE BRIDGE 3A 200V KBPM
3A,200V,GLASS,IN-LINE BRIDGE
3A,200V,GLASS,IN-LINE BRIDGE
The three parts on the right have similar specifications to 3KBP02M-E4/45.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightDiode Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal FormPin CountNumber of ElementsElement ConfigurationDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfCase ConnectionMax Surge CurrentOutput Current-MaxCurrent - Average Rectified (Io)Forward VoltageNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Reverse Voltage (DC)HeightLengthWidthRadiation HardeningRoHS StatusFactory Lead TimeReach Compliance CodeJESD-30 CodeConfigurationNon-rep Pk Forward Current-MaxVoltage - Peak Reverse (Max)Breakdown Voltage-MinContact PlatingPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusMax Reverse Leakage CurrentMax Forward Surge Current (Ifsm)View Compare
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3KBP02M-E4/45Through HoleThrough Hole4-SIP, KBPM41.894996gSILICON-55°C~150°C TJTube2011e4yesObsolete1 (Unlimited)4Through HoleEAR99Silver (Ag)UL RECOGNIZEDBridge Rectifier DiodesStandardWIRE44SingleSingle Phase5μA @ 200V1.05V @ 3AISOLATED80A3A3A1.05V15μA200V140V11.68mm15.24mm5.08mmNoROHS3 Compliant--------------
-
Through HoleThrough Hole4-SIP, KBPM--SILICON-55°C~150°C TJTray2016--Obsolete1 (Unlimited)4-EAR99-UL RECOGNIZED-StandardWIRE-4-Single Phase5μA @ 100V1.05V @ 3AISOLATED-3A3A-1-------ROHS3 Compliant22 WeeksunknownR-PSIP-W4BRIDGE, 4 ELEMENTS80A50V100V------
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Through HoleThrough Hole4-SIP, KBPM4-SILICON-55°C~150°C TJTray2008e4yesObsolete1 (Unlimited)4-EAR99-UL RECOGNIZEDBridge Rectifier DiodesStandardWIRE44-Single Phase5μA @ 200V1.05V @ 3AISOLATED80A3A3A-15μA200V-11.68mm15.24mm5.08mm-ROHS3 Compliant22 Weeksunknown-----SilverNOT APPLICABLENOT APPLICABLENot Qualified5μA80A
-
Through HoleThrough Hole4-SIP, KBPM4-SILICON-55°C~150°C TJTube2008e4yesObsolete1 (Unlimited)4-EAR99Silver (Ag)UL RECOGNIZEDBridge Rectifier DiodesStandardWIRE44SingleSingle Phase5μA @ 100V1.05V @ 3AISOLATED80A3A3A-15μA100V-11.68mm15.24mm5.08mmNoROHS3 Compliant-----------5μA-
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