Part Number: MRFE6S9135HR3 vs MRFE6VP5600HSR5

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Part Number: MRFE6S9135HR3 MRFE6VP5600HSR5
Manufacturer: NXP USA Inc. NXP USA Inc.
Description: FET RF 66V 940MHZ NI-880 FET RF 2CH 130V 230MHZ NI1230S
Quantity Available: Available Available
Datasheets: - -
Package / Case NI-880 NI-1230-4S
Packaging Tape & Reel (TR) Tape & Reel (TR)
Published 2007 2006
Part Status Obsolete Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) Not Applicable
ECCN Code EAR99 EAR99
Voltage - Rated 66V 130V
HTS Code 8541.29.00.75 8541.29.00.75
Frequency 940MHz 230MHz
Base Part Number MRFE6S9135 MRFE6VP5600
Current - Test 1A 100mA
Transistor Type LDMOS LDMOS (Dual)
Gain 21dB 25dB
Power - Output 39W 600W
Voltage - Test 28V 50V
RoHS Status ROHS3 Compliant ROHS3 Compliant
Factory Lead Time - 10 Weeks
Surface Mount - YES
Transistor Element Material - SILICON
Number of Terminations - 4
Subcategory - FET General Purpose Power
Terminal Form - FLAT
Peak Reflow Temperature (Cel) - 260
Time@Peak Reflow Temperature-Max (s) - 40
JESD-30 Code - R-CDFP-F4
Qualification Status - Not Qualified
Operating Temperature (Max) - 225°C
Number of Elements - 2
Configuration - COMMON SOURCE, 2 ELEMENTS
Operating Mode - ENHANCEMENT MODE
Case Connection - SOURCE
Transistor Application - AMPLIFIER
Polarity/Channel Type - N-CHANNEL
DS Breakdown Voltage-Min - 130V
FET Technology - METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) - 1670W
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