Part Number: SI7905DN-T1-E3 vs SI7911DN-T1-GE3
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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| Part Number: | SI7905DN-T1-E3 | SI7911DN-T1-GE3 |
| Manufacturer: | Vishay Siliconix | Vishay Siliconix |
| Description: | MOSFET 2P-CH 40V 6A 1212-8 | MOSFET 2P-CH 20V 4.2A 1212-8 |
| Quantity Available: | Available | Available |
| Datasheets: | - | - |
| Factory Lead Time | 15 Weeks | - |
| Mount | Surface Mount | Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | PowerPAK® 1212-8 Dual | PowerPAK® 1212-8 Dual |
| Number of Pins | 8 | 8 |
| Supplier Device Package | PowerPAK® 1212-8 Dual | - |
| Operating Temperature | -55°C~150°C TJ | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
| Series | TrenchFET® | TrenchFET® |
| Published | 2015 | 2012 |
| Part Status | Obsolete | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Resistance | 60mOhm | - |
| Max Operating Temperature | 150°C | - |
| Min Operating Temperature | -50°C | - |
| Max Power Dissipation | 20.8W | 1.3W |
| Base Part Number | SI7905 | SI7911 |
| Number of Channels | 2 | - |
| Element Configuration | Dual | Dual |
| Turn On Delay Time | 6 ns | 20 ns |
| Power - Max | 20.8W | - |
| FET Type | 2 P-Channel (Dual) | 2 P-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 5A, 10V | 51m Ω @ 5.7A, 4.5V |
| Vgs(th) (Max) @ Id | 3V @ 250μA | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 880pF @ 20V | - |
| Current - Continuous Drain (Id) @ 25°C | 6A | - |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V | 15nC @ 4.5V |
| Rise Time | 13ns | 35ns |
| Drain to Source Voltage (Vdss) | 40V | 20V |
| Fall Time (Typ) | 10 ns | 40 ns |
| Turn-Off Delay Time | 26 ns | 70 ns |
| Continuous Drain Current (ID) | 5A | 4.2A |
| Gate to Source Voltage (Vgs) | 20V | 8V |
| Drain to Source Breakdown Voltage | -40V | -20V |
| Input Capacitance | 880pF | - |
| FET Feature | Standard | Logic Level Gate |
| Drain to Source Resistance | 60mOhm | - |
| Rds On Max | 60 mΩ | - |
| Height | 1.04mm | - |
| Length | 3.05mm | - |
| Width | 3.05mm | - |
| Radiation Hardening | No | No |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Lead Free | Lead Free | Lead Free |
| Transistor Element Material | - | SILICON |
| JESD-609 Code | - | e3 |
| Pbfree Code | - | yes |
| Number of Terminations | - | 6 |
| ECCN Code | - | EAR99 |
| Terminal Finish | - | PURE MATTE TIN |
| Subcategory | - | Other Transistors |
| Terminal Form | - | C BEND |
| Peak Reflow Temperature (Cel) | - | 260 |
| Time@Peak Reflow Temperature-Max (s) | - | 30 |
| Pin Count | - | 8 |
| JESD-30 Code | - | S-XDSO-C6 |
| Number of Elements | - | 2 |
| Operating Mode | - | ENHANCEMENT MODE |
| Case Connection | - | DRAIN |
| Transistor Application | - | SWITCHING |
| Drain-source On Resistance-Max | - | 0.051Ohm |
| Pulsed Drain Current-Max (IDM) | - | 20A |
| FET Technology | - | METAL-OXIDE SEMICONDUCTOR |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
|---|---|---|---|---|
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SI7911DN | VISHAY | Compare | |
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SI7911DN-T1-GE3 QFN8 | VISHAY | Compare | |
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SI7911DN-T1-E3 | VISHAY | original in stock | Compare |
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SI7911DN-T1-E3 | Vishay Siliconix | MOSFET 2P-CH 20V 4.2A 1212-8 | Compare |
