Part Number: SI7905DN-T1-E3 vs SI7946DP-T1-E3
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Part Number: | SI7905DN-T1-E3 | SI7946DP-T1-E3 |
Manufacturer: | Vishay Siliconix | Vishay Siliconix |
Description: | MOSFET 2P-CH 40V 6A 1212-8 | MOSFET 2N-CH 150V 2.1A PPAK SO-8 |
Quantity Available: | Available | Available |
Datasheets: | - | - |
Factory Lead Time | 15 Weeks | - |
Mount | Surface Mount | Surface Mount |
Mounting Type | Surface Mount | Surface Mount |
Package / Case | PowerPAK® 1212-8 Dual | PowerPAK® SO-8 Dual |
Number of Pins | 8 | 8 |
Supplier Device Package | PowerPAK® 1212-8 Dual | - |
Operating Temperature | -55°C~150°C TJ | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
Series | TrenchFET® | TrenchFET® |
Published | 2015 | 2011 |
Part Status | Obsolete | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
Resistance | 60mOhm | 150MOhm |
Max Operating Temperature | 150°C | - |
Min Operating Temperature | -50°C | - |
Max Power Dissipation | 20.8W | 1.4W |
Base Part Number | SI7905 | SI7946 |
Number of Channels | 2 | - |
Element Configuration | Dual | Dual |
Turn On Delay Time | 6 ns | 11 ns |
Power - Max | 20.8W | - |
FET Type | 2 P-Channel (Dual) | 2 N-Channel (Dual) |
Rds On (Max) @ Id, Vgs | 60mOhm @ 5A, 10V | 150m Ω @ 3.3A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 880pF @ 20V | - |
Current - Continuous Drain (Id) @ 25°C | 6A | 2.1A |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V | 20nC @ 10V |
Rise Time | 13ns | 15ns |
Drain to Source Voltage (Vdss) | 40V | - |
Fall Time (Typ) | 10 ns | 20 ns |
Turn-Off Delay Time | 26 ns | 30 ns |
Continuous Drain Current (ID) | 5A | 3.3A |
Gate to Source Voltage (Vgs) | 20V | 20V |
Drain to Source Breakdown Voltage | -40V | 150V |
Input Capacitance | 880pF | - |
FET Feature | Standard | Logic Level Gate |
Drain to Source Resistance | 60mOhm | - |
Rds On Max | 60 mΩ | - |
Height | 1.04mm | - |
Length | 3.05mm | - |
Width | 3.05mm | - |
Radiation Hardening | No | No |
RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
Lead Free | Lead Free | Lead Free |
Transistor Element Material | - | SILICON |
JESD-609 Code | - | e3 |
Pbfree Code | - | yes |
Number of Terminations | - | 6 |
ECCN Code | - | EAR99 |
Terminal Finish | - | Matte Tin (Sn) |
Additional Feature | - | AVALANCHE RATED |
Subcategory | - | FET General Purpose Power |
Terminal Form | - | C BEND |
Peak Reflow Temperature (Cel) | - | 260 |
Time@Peak Reflow Temperature-Max (s) | - | 40 |
Pin Count | - | 8 |
JESD-30 Code | - | R-XDSO-C6 |
Number of Elements | - | 2 |
Operating Mode | - | ENHANCEMENT MODE |
Power Dissipation | - | 1.4W |
Case Connection | - | DRAIN |
Transistor Application | - | SWITCHING |
Pulsed Drain Current-Max (IDM) | - | 10A |
Avalanche Energy Rating (Eas) | - | 4 mJ |
FET Technology | - | METAL-OXIDE SEMICONDUCTOR |
Nominal Vgs | - | 4 V |
REACH SVHC | - | Unknown |
Submit RFQ: | Submit | Submit |