| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
 |
.jpg) |
| Part Number: |
UMH11NTN |
UMH1N-TP |
| Manufacturer: |
Rohm Semiconductor |
Micro Commercial Co |
| Description: |
TRANS 2NPN PREBIAS 0.15W UMT6 |
TRANS 2NPN PREBIAS 0.15W SOT363 |
| Quantity Available: |
Available |
Available |
| Datasheets: |
-
|
-
|
| Factory Lead Time |
13 Weeks |
12 Weeks |
| Mount |
Surface Mount |
- |
| Mounting Type |
Surface Mount |
Surface Mount |
| Package / Case |
6-TSSOP, SC-88, SOT-363 |
6-TSSOP, SC-88, SOT-363 |
| Number of Pins |
6 |
- |
| Packaging |
Tape & Reel (TR) |
Cut Tape (CT) |
| Published |
2004 |
2005 |
| JESD-609 Code |
e2 |
e3 |
| Pbfree Code |
yes |
yes |
| Part Status |
Active |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| Number of Terminations |
6 |
6 |
| ECCN Code |
EAR99 |
EAR99 |
| Terminal Finish |
Tin/Copper (Sn/Cu) |
Matte Tin (Sn) |
| Max Operating Temperature |
150°C |
- |
| Min Operating Temperature |
-55°C |
- |
| Additional Feature |
BUILT-IN BIAS RESISTOR RATIO IS 1 |
BUILT-IN BIAS RESISTOR RATIO IS 1 |
| HTS Code |
8541.21.00.75 |
- |
| Subcategory |
BIP General Purpose Small Signal |
BIP General Purpose Small Signal |
| Voltage - Rated DC |
50V |
- |
| Max Power Dissipation |
150mW |
- |
| Terminal Form |
GULL WING |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
260 |
| Current Rating |
50mA |
- |
| Time@Peak Reflow Temperature-Max (s) |
10 |
10 |
| Base Part Number |
*MH11 |
UMH1N |
| Pin Count |
6 |
6 |
| Max Output Current |
100mA |
- |
| Operating Supply Voltage |
50V |
- |
| Number of Elements |
2 |
2 |
| Polarity |
NPN |
- |
| Element Configuration |
Dual |
- |
| Power Dissipation |
150mW |
- |
| Transistor Application |
SWITCHING |
SWITCHING |
| Transistor Type |
2 NPN - Pre-Biased (Dual) |
2 NPN - Pre-Biased (Dual) |
| Collector Emitter Voltage (VCEO) |
300mV |
- |
| Max Collector Current |
100mA |
- |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
30 @ 5mA 5V |
56 @ 5mA 5V |
| Current - Collector Cutoff (Max) |
500nA |
500nA |
| Vce Saturation (Max) @ Ib, Ic |
300mV @ 500μA, 10mA |
300mV @ 500μA, 10mA |
| Collector Emitter Breakdown Voltage |
50V |
- |
| Transition Frequency |
250MHz |
250MHz |
| Max Breakdown Voltage |
50V |
- |
| Frequency - Transition |
250MHz |
250MHz |
| hFE Min |
30 |
- |
| Resistor - Base (R1) |
10k Ω |
22k Ω |
| Continuous Collector Current |
100mA |
- |
| Resistor - Emitter Base (R2) |
10k Ω |
22k Ω |
| VCEsat-Max |
0.3 V |
- |
| REACH SVHC |
No SVHC |
- |
| Radiation Hardening |
No |
- |
| RoHS Status |
ROHS3 Compliant |
ROHS3 Compliant |
| Lead Free |
Lead Free |
- |
| Surface Mount |
- |
YES |
| Transistor Element Material |
- |
SILICON |
| JESD-30 Code |
- |
R-PDSO-G6 |
| Qualification Status |
- |
Not Qualified |
| Operating Temperature (Max) |
- |
150°C |
| Configuration |
- |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| Power - Max |
- |
150mW |
| Polarity/Channel Type |
- |
NPN |
| Voltage - Collector Emitter Breakdown (Max) |
- |
50V |
| Current - Collector (Ic) (Max) |
- |
100mA |
| Power Dissipation-Max (Abs) |
- |
0.15W |
| Submit RFQ: |
Submit |
Submit |
