| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
IXGX72N60C3H1 |
IXGX120N60B3 |
| Manufacturer: |
IXYS |
IXYS |
| Description: |
IGBT 600V 75A 540W PLUS247 |
IGBT 600V 280A 780W PLUS247 |
| Quantity Available: |
Available |
Available |
| Datasheets: |
-
|
-
|
| Factory Lead Time |
8 Weeks |
30 Weeks |
| Mount |
Through Hole |
Through Hole |
| Mounting Type |
Through Hole |
Through Hole |
| Package / Case |
TO-247-3 |
TO-247-3 |
| Transistor Element Material |
SILICON |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
-55°C~150°C TJ |
| Packaging |
Tube |
Tube |
| Series |
GenX3™ |
GenX3™ |
| Published |
2009 |
2009 |
| JESD-609 Code |
e1 |
e1 |
| Pbfree Code |
yes |
yes |
| Part Status |
Active |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| Number of Terminations |
3 |
3 |
| Terminal Finish |
TIN SILVER COPPER |
TIN SILVER COPPER |
| Additional Feature |
LOW CONDUCTION LOSS |
- |
| Subcategory |
Insulated Gate BIP Transistors |
Insulated Gate BIP Transistors |
| Max Power Dissipation |
540W |
780W |
| Terminal Position |
SINGLE |
- |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
NOT SPECIFIED |
| Base Part Number |
IXG*72N60 |
IXG*120N60 |
| Pin Count |
3 |
3 |
| JESD-30 Code |
R-PSFM-T3 |
- |
| Qualification Status |
Not Qualified |
Not Qualified |
| Number of Elements |
1 |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
- |
| Case Connection |
COLLECTOR |
COLLECTOR |
| Input Type |
Standard |
Standard |
| Turn On Delay Time |
27 ns |
- |
| Power - Max |
540W |
- |
| Transistor Application |
POWER CONTROL |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
N-CHANNEL |
| Turn-Off Delay Time |
77 ns |
- |
| Collector Emitter Voltage (VCEO) |
2.5V |
1.8V |
| Max Collector Current |
75A |
280A |
| Reverse Recovery Time |
140 ns |
- |
| Collector Emitter Breakdown Voltage |
600V |
600V |
| Turn On Time |
62 ns |
123 ns |
| Test Condition |
480V, 50A, 2 Ω, 15V |
480V, 100A, 2 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 50A |
1.8V @ 15V, 100A |
| Turn Off Time-Nom (toff) |
244 ns |
520 ns |
| IGBT Type |
PT |
PT |
| Gate Charge |
174nC |
465nC |
| Current - Collector Pulsed (Icm) |
360A |
600A |
| Td (on/off) @ 25°C |
27ns/77ns |
40ns/227ns |
| Switching Energy |
1.03mJ (on), 480μJ (off) |
2.9mJ (on), 3.5mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
20V |
| Gate-Emitter Thr Voltage-Max |
5.5V |
5V |
| Fall Time-Max (tf) |
110ns |
- |
| RoHS Status |
ROHS3 Compliant |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Lead Free |
| Number of Pins |
- |
3 |
| Element Configuration |
- |
Single |
| Power Dissipation |
- |
780W |
| Collector Emitter Saturation Voltage |
- |
1.5V |
| Submit RFQ: |
Submit |
Submit |
