Part Number: GP1M003A050PG vs GP1M006A065PH

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Part Number: GP1M003A050PG GP1M006A065PH
Manufacturer: Global Power Technologies Group Global Power Technologies Group
Description: MOSFET N-CH 500V 2.5A IPAK MOSFET N-CH 650V 5.5A IPAK
Quantity Available: Available Available
Datasheets: - -
Mounting Type Through Hole Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package I-PAK I-PAK
Operating Temperature -55°C~150°C TJ -55°C~150°C TJ
Packaging Tape & Reel (TR) Tape & Reel (TR)
Part Status Obsolete Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Power Dissipation-Max 52W Tc 120W Tc
FET Type N-Channel N-Channel
Rds On (Max) @ Id, Vgs 2.8Ohm @ 1.25A, 10V 1.6Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 395pF @ 25V 1177pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.5A Tc 5.5A Tc
Gate Charge (Qg) (Max) @ Vgs 9.2nC @ 10V 17nC @ 10V
Drain to Source Voltage (Vdss) 500V 650V
Drive Voltage (Max Rds On,Min Rds On) 10V 10V
Vgs (Max) ±30V ±30V
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