Global Power Technologies Group GP1M003A050PG

Name: GP1M003A050PG
Brand: Global Power Technologies Group
SKU: 3586304-GP1M003A050PG
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: GP1M003A050PG

Manufacturer:: Global Power Technologies Group

Ventron No:: 3586304-GP1M003A050PG

Description:: MOSFET N-CH 500V 2.5A IPAK

ECAD Model:

Datasheet:: GP1M003A050PG

Specifications

Global Power Technologies Group GP1M003A050PG technical specifications, attributes, parameters and parts with similar specifications to Global Power Technologies Group GP1M003A050PG.

Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
I-PAK
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
52W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
2.8Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
395pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2.5A Tc
Gate Charge (Qg) (Max) @ Vgs
9.2nC @ 10V
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V

Description

GP1M003A050PG Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 395pF @ 25V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

GP1M003A050PG Features
a 500V drain to source voltage (Vdss)

GP1M003A050PG Applications
There are a lot of SemiQ
GP1M003A050PG applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

GP1M003A050PG More Descriptions

MOSFET N-CH 500V 2.5A IPAK

Product Comparison

The three parts on the right have similar specifications to GP1M003A050PG.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

View Compare
GP1M003A050PG

Global Power Technologies Group

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

I-PAK

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

52W Tc

N-Channel

2.8Ohm @ 1.25A, 10V

4V @ 250μA

395pF @ 25V

2.5A Tc

9.2nC @ 10V

500V

10V

±30V

-
GP1M012A060FH

Global Power Technologies Group

Through Hole

TO-220-3 Full Pack

TO-220F

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

53W Tc

N-Channel

650mOhm @ 6A, 10V

4V @ 250μA

2308pF @ 25V

12A Tc

39nC @ 10V

600V

10V

±30V

GP1M003A050PG vs GP1M012A060FH
GP1M012A060H

Global Power Technologies Group

Through Hole

TO-220-3

TO-220

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

231W Tc

N-Channel

650mOhm @ 6A, 10V

4V @ 250μA

2308pF @ 25V

12A Tc

39nC @ 10V

600V

10V

±30V

GP1M003A050PG vs GP1M012A060H
GP1M006A065PH

Global Power Technologies Group

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

I-PAK

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

120W Tc

N-Channel

1.6Ohm @ 2.75A, 10V

4V @ 250μA

1177pF @ 25V

5.5A Tc

17nC @ 10V

650V

10V

±30V

GP1M003A050PG vs GP1M006A065PH