Part Number: RN2908(T5L,F,T) vs RN2906,LF

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Part Number: RN2908(T5L,F,T) RN2906,LF
Manufacturer: Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6 TRANS 2PNP PREBIAS 0.2W US6
Quantity Available: Available Available
Datasheets: - -
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6 US6
Packaging Tape & Reel (TR) Cut Tape (CT)
Published 2014 2014
Part Status Obsolete Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Power - Max 200mW 200mW
Transistor Type 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V 80 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V
Current - Collector (Ic) (Max) 100mA 100mA
Frequency - Transition 200MHz 200MHz
Resistor - Base (R1) 47kOhms 4.7kOhms
Resistor - Emitter Base (R2) 22kOhms 47kOhms
Factory Lead Time - 12 Weeks
Mount - Surface Mount
Number of Pins - 6
Max Operating Temperature - 150°C
Min Operating Temperature - -55°C
Max Power Dissipation - 200mW
Polarity - PNP
Collector Emitter Voltage (VCEO) - 300mV
Max Collector Current - 100mA
Collector Emitter Breakdown Voltage - 50V
Max Breakdown Voltage - 50V
Collector Base Voltage (VCBO) - -50V
Emitter Base Voltage (VEBO) - -5V
hFE Min - 80
Continuous Collector Current - -100mA
Height - 900μm
Length - 2mm
Width - 1.25mm
RoHS Status - RoHS Compliant
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