Part Number: SMUN5335DW1T1G vs SMUN5113DW1T1G

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Part Number: SMUN5335DW1T1G SMUN5113DW1T1G
Manufacturer: ON Semiconductor ON Semiconductor
Description: TRANS NPN/PNP PREBIAS SOT363 TRANS 2PNP PREBIAS 0.187W SOT363
Quantity Available: Available Available
Datasheets: - -
Lifecycle Status ACTIVE (Last Updated: 7 hours ago) ACTIVE (Last Updated: 5 days ago)
Factory Lead Time 8 Weeks 8 Weeks
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Surface Mount YES YES
Number of Pins 6 6
Packaging Tape & Reel (TR) Tape & Reel (TR)
Published 2012 2012
JESD-609 Code e3 e3
Pbfree Code yes yes
Part Status Active Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 6 6
ECCN Code EAR99 EAR99
Terminal Finish Tin (Sn) Tin (Sn)
Max Operating Temperature 150°C 150°C
Min Operating Temperature -55°C -55°C
Subcategory BIP General Purpose Small Signal BIP General Purpose Small Signal
Max Power Dissipation 187mW 187mW
Terminal Form GULL WING GULL WING
Base Part Number MUN53**DW1 MUN51**DW1T
Pin Count 6 6
Reference Standard AEC-Q101 AEC-Q101
Number of Elements 2 2
Polarity NPN, PNP PNP
Element Configuration Dual Dual
Transistor Application SWITCHING SWITCHING
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V 50V
Max Collector Current 100mA 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V 50V
hFE Min 80 80
Resistor - Base (R1) 2.2k Ω 47k Ω
Resistor - Emitter Base (R2) 47k Ω 47k Ω
Radiation Hardening No No
RoHS Status ROHS3 Compliant ROHS3 Compliant
Lead Free Lead Free Lead Free
Additional Feature - BUILT IN BIAS RESISTANCE RATIO IS 1
Halogen Free - Halogen Free
Max Breakdown Voltage - 50V
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