| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
SP8K3TB |
SP8K4TB |
| Manufacturer: |
Rohm Semiconductor |
Rohm Semiconductor |
| Description: |
MOSFET 2N-CH 30V 7A 8-SOIC |
MOSFET 2N-CH 30V 9A 8-SOIC |
| Quantity Available: |
Available |
Available |
| Datasheets: |
SP8K3
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-
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| Mount |
Surface Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
8 |
| Transistor Element Material |
SILICON |
SILICON |
| Operating Temperature |
150°C TJ |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
Cut Tape (CT) |
| Published |
2004 |
2004 |
| JESD-609 Code |
e2 |
e2 |
| Pbfree Code |
yes |
- |
| Part Status |
Active |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| Number of Terminations |
8 |
8 |
| ECCN Code |
EAR99 |
EAR99 |
| Terminal Finish |
Tin/Copper (Sn/Cu) |
TIN COPPER |
| Subcategory |
FET General Purpose Power |
FET General Purpose Power |
| Voltage - Rated DC |
30V |
30V |
| Max Power Dissipation |
2W |
2W |
| Terminal Form |
GULL WING |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
260 |
| Current Rating |
3.5A |
9A |
| Time@Peak Reflow Temperature-Max (s) |
10 |
10 |
| Base Part Number |
*K3 |
*K4 |
| Pin Count |
8 |
8 |
| Qualification Status |
Not Qualified |
Not Qualified |
| Number of Elements |
2 |
2 |
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| FET Type |
2 N-Channel (Dual) |
2 N-Channel (Dual) |
| Transistor Application |
SWITCHING |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
24m Ω @ 7A, 10V |
17m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 1mA |
2.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
600pF @ 10V |
1190pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
11.8nC @ 5V |
21nC @ 5V |
| Rise Time |
10ns |
15ns |
| Continuous Drain Current (ID) |
7A |
9A |
| Drain Current-Max (Abs) (ID) |
7A |
9A |
| Drain-source On Resistance-Max |
0.035Ohm |
0.024Ohm |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
| FET Feature |
Logic Level Gate |
Logic Level Gate |
| RoHS Status |
ROHS3 Compliant |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Lead Free |
| Pulsed Drain Current-Max (IDM) |
- |
36A |
| Submit RFQ: |
Submit |
Submit |
