| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
SP8K3TB |
SP8K5FU6TB |
| Manufacturer: |
Rohm Semiconductor |
Rohm Semiconductor |
| Description: |
MOSFET 2N-CH 30V 7A 8-SOIC |
MOSFET 2N-CH 30V 3.5A 8SOIC |
| Quantity Available: |
Available |
Available |
| Datasheets: |
SP8K3
|
SP8K5
|
| Mount |
Surface Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
8 |
| Transistor Element Material |
SILICON |
- |
| Operating Temperature |
150°C TJ |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
Tape & Reel (TR) |
| Published |
2004 |
2004 |
| JESD-609 Code |
e2 |
- |
| Pbfree Code |
yes |
- |
| Part Status |
Active |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| Number of Terminations |
8 |
- |
| ECCN Code |
EAR99 |
EAR99 |
| Terminal Finish |
Tin/Copper (Sn/Cu) |
- |
| Subcategory |
FET General Purpose Power |
- |
| Voltage - Rated DC |
30V |
- |
| Max Power Dissipation |
2W |
2W |
| Terminal Form |
GULL WING |
- |
| Peak Reflow Temperature (Cel) |
260 |
- |
| Current Rating |
3.5A |
- |
| Time@Peak Reflow Temperature-Max (s) |
10 |
- |
| Base Part Number |
*K3 |
*K5 |
| Pin Count |
8 |
- |
| Qualification Status |
Not Qualified |
- |
| Number of Elements |
2 |
- |
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
- |
| Operating Mode |
ENHANCEMENT MODE |
- |
| FET Type |
2 N-Channel (Dual) |
2 N-Channel (Dual) |
| Transistor Application |
SWITCHING |
- |
| Rds On (Max) @ Id, Vgs |
24m Ω @ 7A, 10V |
83m Ω @ 3.5A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 1mA |
2.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds |
600pF @ 10V |
140pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
11.8nC @ 5V |
3.5nC @ 5V |
| Rise Time |
10ns |
6ns |
| Continuous Drain Current (ID) |
7A |
3.5A |
| Drain Current-Max (Abs) (ID) |
7A |
- |
| Drain-source On Resistance-Max |
0.035Ohm |
- |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
- |
| FET Feature |
Logic Level Gate |
Logic Level Gate |
| RoHS Status |
ROHS3 Compliant |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Lead Free |
| Termination |
- |
SMD/SMT |
| Power Dissipation |
- |
2W |
| Turn On Delay Time |
- |
6 ns |
| Fall Time (Typ) |
- |
4 ns |
| Turn-Off Delay Time |
- |
17 ns |
| Gate to Source Voltage (Vgs) |
- |
20V |
| Drain to Source Breakdown Voltage |
- |
30V |
| Dual Supply Voltage |
- |
30V |
| Nominal Vgs |
- |
2.5 V |
| REACH SVHC |
- |
No SVHC |
| Radiation Hardening |
- |
No |
| Submit RFQ: |
Submit |
Submit |
