Part Number: MT4VDDT1664HY-335F3 vs MT4VDDT3264HY-335J1

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Part Number: MT4VDDT1664HY-335F3 MT4VDDT3264HY-335J1
Manufacturer: Micron Technology Inc. Micron Technology Inc.
Description: MODULE DDR SDRAM 128MB 200SODIMM MODULE DDR SDRAM 256MB 200SODIMM
Quantity Available: Available Available
Datasheets: - -
Mount Socket Socket
Package / Case 200-SODIMM 200-SODIMM
Number of Pins 200 200
Published 2003 2003
Part Status Discontinued Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 200 200
Max Operating Temperature 70°C 70°C
Min Operating Temperature 0°C 0°C
Subcategory DRAMs DRAMs
Technology CMOS CMOS
Terminal Position DUAL DUAL
Terminal Form NO LEAD -
Supply Voltage 2.5V 2.5V
Terminal Pitch 0.6mm 0.6mm
Reach Compliance Code unknown -
Frequency 200MHz -
Qualification Status Not Qualified -
Operating Supply Voltage 2.5V 2.5V
Number of Elements 4 4
Temperature Grade COMMERCIAL COMMERCIAL
Max Supply Voltage 2.7V 2.7V
Min Supply Voltage 2.3V 2.3V
Memory Size 128MB 256MB
Memory Type DDR SDRAM DDR SDRAM
Supply Current-Max 1.76mA 1.62mA
Access Time 700 ps -
Output Characteristics 3-STATE 3-STATE
Memory Width 64 64
I/O Type COMMON COMMON
Refresh Cycles 8192 8192
RoHS Status ROHS3 Compliant ROHS3 Compliant
Speed - 333MT/s
Clock Frequency - 167MHz
Data Bus Width - 64b
Max Frequency - 333MHz
Access Time (Max) - 0.7 ns
Radiation Hardening - No
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