Part Number: MT4HTF3264AY-80ED3 vs MT4HTF3264HZ-667G1

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Part Number: MT4HTF3264AY-80ED3 MT4HTF3264HZ-667G1
Manufacturer: Micron Technology Inc. Micron Technology Inc.
Description: MODULE DDR2 SDRAM 256MB 240UDIMM MOD DDR2 SDRAM 256MB 200SODIMM
Quantity Available: Available Available
Datasheets: MT4HTFxx64AY MT4HTFyyyHZ
Package / Case 240-UDIMM 200-SODIMM
Surface Mount NO -
Number of Pins 240 200
Packaging Bulk -
Published 2002 2010
Part Status Obsolete Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited) 3 (168 Hours)
Number of Terminations 240 200
Subcategory DRAMs DRAMs
Technology CMOS CMOS
Terminal Position DUAL DUAL
Terminal Form NO LEAD -
Supply Voltage 1.8V 1.8V
Terminal Pitch 1mm 0.6mm
Reach Compliance Code unknown -
Qualification Status Not Qualified -
Operating Temperature (Max) 70°C -
Power Supplies 1.8V -
Temperature Grade COMMERCIAL COMMERCIAL
Memory Size 256MB 256MB
Speed 800MT/s 667MT/s
Memory Type DDR2 SDRAM DDR2 SDRAM
Clock Frequency 400MHz 333MHz
Supply Current-Max 1.48mA -
Organization 32MX64 -
Output Characteristics 3-STATE 3-STATE
Memory Width 64 64
Memory Density 2147483648 bit -
Access Time (Max) 0.4 ns -
I/O Type COMMON COMMON
Refresh Cycles 8192 8192
Height 29.5mm -
RoHS Status ROHS3 Compliant ROHS3 Compliant
Lead Free Lead Free -
Mount - Socket
JESD-609 Code - e3
Pbfree Code - yes
Terminal Finish - MATTE TIN
Max Operating Temperature - 70°C
Min Operating Temperature - 0°C
Peak Reflow Temperature (Cel) - 260
Time@Peak Reflow Temperature-Max (s) - 30
Operating Supply Voltage - 1.8V
Number of Elements - 4
Max Supply Voltage - 1.9V
Min Supply Voltage - 1.7V
Data Bus Width - 64b
Standby Current-Max - 0.028A
Max Frequency - 667MHz
Radiation Hardening - No
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