Part Number: NAND256W3A0BE06 vs NAND01GW3B2CN6E
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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|---|---|---|
| Part Number: | NAND256W3A0BE06 | NAND01GW3B2CN6E |
| Manufacturer: | Micron Technology Inc. | Micron Technology Inc. |
| Description: | IC FLASH 256MBIT 50NS WAFER | IC FLASH 1GBIT 30NS 48TSOP |
| Quantity Available: | Available | Available |
| Datasheets: | - | NAND01G-B2B, NAND02G-B2C |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 48-TFSOP (0.724, 18.40mm Width) | 48-TFSOP (0.724, 18.40mm Width) |
| Supplier Device Package | 48-TSOP | - |
| Operating Temperature | -40°C~85°C TA | -40°C~85°C TA |
| Packaging | Bulk | Tray |
| Published | 2012 | 2008 |
| Part Status | Obsolete | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | 3 (168 Hours) |
| Max Operating Temperature | 85°C | - |
| Min Operating Temperature | -40°C | - |
| Technology | FLASH - NAND | FLASH - NAND |
| Voltage - Supply | 2.7V~3.6V | 2.7V~3.6V |
| Interface | Parallel | - |
| Memory Size | 256Mb 32M x 8 | 1Gb 128M x 8 |
| Memory Type | Non-Volatile | Non-Volatile |
| Access Time | 50ns | - |
| Memory Format | FLASH | FLASH |
| Memory Interface | Parallel | Parallel |
| Write Cycle Time - Word, Page | 50ns | 25ns |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Mount | - | Surface Mount |
| Number of Pins | - | 48 |
| JESD-609 Code | - | e3 |
| Number of Terminations | - | 48 |
| ECCN Code | - | 3A991.B.1.A |
| Terminal Finish | - | Matte Tin (Sn) |
| HTS Code | - | 8542.32.00.51 |
| Terminal Position | - | DUAL |
| Peak Reflow Temperature (Cel) | - | 260 |
| Number of Functions | - | 1 |
| Supply Voltage | - | 3V |
| Terminal Pitch | - | 0.5mm |
| Time@Peak Reflow Temperature-Max (s) | - | 30 |
| Base Part Number | - | NAND01G-A |
| Pin Count | - | 48 |
| Supply Voltage-Max (Vsup) | - | 3.6V |
| Power Supplies | - | 3/3.3V |
| Supply Voltage-Min (Vsup) | - | 2.7V |
| Nominal Supply Current | - | 30mA |
| Organization | - | 128MX8 |
| Memory Width | - | 8 |
| Address Bus Width | - | 28b |
| Density | - | 1 Gb |
| Standby Current-Max | - | 0.00005A |
| Access Time (Max) | - | 25000 ns |
| Sync/Async | - | Asynchronous |
| Word Size | - | 8b |
| Programming Voltage | - | 3V |
| Write Cycle Time-Max (tWC) | - | 25ms |
| Data Polling | - | NO |
| Toggle Bit | - | NO |
| Command User Interface | - | YES |
| Number of Sectors/Size | - | 1K |
| Sector Size | - | 128K |
| Page Size | - | 2kB |
| Ready/Busy | - | YES |
| Height Seated (Max) | - | 1.2mm |
| Length | - | 18.4mm |
| Radiation Hardening | - | No |
| REACH SVHC | - | No SVHC |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
|---|---|---|---|---|
 |
NAND01GR3B2CZA6E | Micron Technology Inc. | Surface Mount 63 Pin Memory IC NAND01G-A 1 Gb kb 11mm mm 20mA mA 8b b | Compare |
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NAND016W3B2CN6 | TSSOP48 | Compare | |
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NAND01GW3B2BZA6F | MICRON | Compare | |
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NAND01GR3B2CZA6F | ST | Compare | |
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NAND01GR3B2BZA6 | ST | Compare | |
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NAND01GR3B | ST | Compare |
