Part Number: MT47H32M8BP-5E:B TR vs MT47H512M4EB-187E:C

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Part Number: MT47H32M8BP-5E:B TR MT47H512M4EB-187E:C
Manufacturer: Micron Technology Inc. Micron Technology Inc.
Description: IC SDRAM 256MBIT 200MHZ 60FBGA 60 Pin Memory IC MT47H512M4 2 Gb kb 11.5mm mm
Quantity Available: Available Available
Datasheets: MT47H64M4,32M8,16M16 MT47H512M4, 256M8, 128M16
Mounting Type Surface Mount Surface Mount
Package / Case 60-FBGA 60-TFBGA
Supplier Device Package 60-FBGA (8x12) -
Operating Temperature 0°C~85°C TC 0°C~85°C TC
Packaging Tape & Reel (TR) Tray
Published 2009 2012
Part Status Discontinued Discontinued
Moisture Sensitivity Level (MSL) 2 (1 Year) 3 (168 Hours)
Technology SDRAM - DDR2 SDRAM - DDR2
Voltage - Supply 1.7V~1.9V 1.7V~1.9V
Base Part Number MT47H32M8B MT47H512M4
Memory Size 256Mb 32M x 8 2Gb 512M x 4
Memory Type Volatile Volatile
Clock Frequency 200MHz 533MHz
Access Time 600ps 350ps
Memory Format DRAM DRAM
Memory Interface Parallel Parallel
Write Cycle Time - Word, Page 15ns 15ns
RoHS Status ROHS3 Compliant ROHS3 Compliant
Surface Mount - YES
Number of Pins - 60
JESD-609 Code - e1
Pbfree Code - yes
Number of Terminations - 60
ECCN Code - EAR99
Terminal Finish - TIN SILVER COPPER
Additional Feature - AUTO/SELF REFRESH
HTS Code - 8542.32.00.36
Terminal Position - BOTTOM
Peak Reflow Temperature (Cel) - 260
Number of Functions - 1
Supply Voltage - 1.8V
Terminal Pitch - 0.8mm
Time@Peak Reflow Temperature-Max (s) - 30
Pin Count - 60
Operating Supply Voltage - 1.8V
Supply Voltage-Max (Vsup) - 1.9V
Supply Voltage-Min (Vsup) - 1.7V
Number of Ports - 1
Data Bus Width - 4b
Organization - 512MX4
Output Characteristics - 3-STATE
Memory Width - 4
Address Bus Width - 18b
Density - 2 Gb
Max Frequency - 1.066GHz
I/O Type - COMMON
Refresh Cycles - 8192
Sequential Burst Length - 48
Interleaved Burst Length - 48
Length - 11.5mm
Height Seated (Max) - 1.2mm
Radiation Hardening - No
Lead Free - Lead Free
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