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Part Number: |
CY7S1061GE30-10BVXIT |
CY7S1061G18-15ZSXIT |
Manufacturer: |
Cypress Semiconductor Corp |
Cypress Semiconductor Corp |
Description: |
IC SRAM 16MBIT 10NS 48BGA |
IC SRAM 16MBIT 15NS 54TSOP |
Quantity Available: |
Available |
Available |
Datasheets: |
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Factory Lead Time |
13 Weeks |
13 Weeks |
Mounting Type |
Surface Mount |
Surface Mount |
Package / Case |
48-VFBGA |
54-TSOP (0.400, 10.16mm Width) |
Surface Mount |
YES |
YES |
Number of Pins |
48 |
- |
Operating Temperature |
-40°C~85°C TA |
-40°C~85°C TA |
Packaging |
Tape & Reel (TR) |
Tape & Reel (TR) |
Published |
1996 |
1996 |
Pbfree Code |
yes |
yes |
Part Status |
Active |
Active |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
3 (168 Hours) |
Number of Terminations |
48 |
54 |
ECCN Code |
3A991.B.2.A |
3A991.B.2.B |
HTS Code |
8542.32.00.41 |
8542.32.00.41 |
Technology |
SRAM - Synchronous, SDR |
SRAM - Synchronous, SDR |
Voltage - Supply |
2.2V~3.6V |
1.65V~2.2V |
Terminal Position |
BOTTOM |
DUAL |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
NOT SPECIFIED |
Number of Functions |
1 |
1 |
Supply Voltage |
3V |
1.8V |
Terminal Pitch |
0.75mm |
0.8mm |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
NOT SPECIFIED |
Supply Voltage-Max (Vsup) |
3.6V |
2.2V |
Supply Voltage-Min (Vsup) |
2.2V |
1.65V |
Memory Size |
16Mb 1M x 16 |
16Mb 1M x 16 |
Memory Type |
Volatile |
Volatile |
Operating Mode |
ASYNCHRONOUS |
ASYNCHRONOUS |
Memory Format |
SRAM |
SRAM |
Memory Interface |
Parallel |
Parallel |
Organization |
1MX16 |
1MX16 |
Memory Width |
16 |
16 |
Write Cycle Time - Word, Page |
10ns |
15ns |
Memory Density |
16777216 bit |
16777216 bit |
Access Time (Max) |
10 ns |
10 ns |
Height Seated (Max) |
1mm |
1.2mm |
Length |
8mm |
22.415mm |
Width |
6mm |
10.16mm |
RoHS Status |
ROHS3 Compliant |
ROHS3 Compliant |
JESD-30 Code |
- |
R-PDSO-G54 |
Submit RFQ: |
Submit |
Submit |