Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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Part Number: |
CY62167G18-55BVXI |
CY62146GE30-45ZSXIT |
Manufacturer: |
Cypress Semiconductor Corp |
Cypress Semiconductor Corp |
Description: |
IC SRAM 16MBIT 55NS 48VFBGA |
MoBL® Memory IC MoBL® Series |
Quantity Available: |
Available |
Available |
Datasheets: |
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Factory Lead Time |
13 Weeks |
13 Weeks |
Mounting Type |
Surface Mount |
Surface Mount |
Package / Case |
48-VFBGA |
44-TSOP (0.400, 10.16mm Width) |
Surface Mount |
YES |
- |
Number of Pins |
48 |
- |
Operating Temperature |
-40°C~85°C TA |
-40°C~85°C TA |
Packaging |
Tray |
Tape & Reel (TR) |
Published |
2011 |
- |
Series |
MoBL® |
MoBL® |
JESD-609 Code |
e1 |
- |
Part Status |
Active |
Active |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
3 (168 Hours) |
Number of Terminations |
48 |
- |
ECCN Code |
3A991.B.2.A |
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Terminal Finish |
TIN SILVER COPPER |
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HTS Code |
8542.32.00.41 |
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Technology |
SRAM - Asynchronous |
SRAM - Asynchronous |
Voltage - Supply |
1.65V~2.2V |
2.2V~3.6V |
Terminal Position |
BOTTOM |
- |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
- |
Number of Functions |
1 |
- |
Supply Voltage |
1.8V |
- |
Terminal Pitch |
0.75mm |
- |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
- |
Supply Voltage-Max (Vsup) |
2.2V |
- |
Supply Voltage-Min (Vsup) |
1.65V |
- |
Memory Size |
16Mb 2M x 8 1M x 16 |
4Mb 256K x 16 |
Memory Type |
Volatile |
Volatile |
Memory Format |
SRAM |
SRAM |
Memory Interface |
Parallel |
Parallel |
Organization |
1MX16 |
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Memory Width |
16 |
- |
Write Cycle Time - Word, Page |
55ns |
45ns |
Memory Density |
16777216 bit |
- |
Access Time (Max) |
55 ns |
- |
Alternate Memory Width |
8 |
- |
Height Seated (Max) |
1mm |
- |
Length |
8mm |
- |
Width |
6mm |
- |
RoHS Status |
ROHS3 Compliant |
ROHS3 Compliant |
Submit RFQ: |
Submit |
Submit |