Cypress Semiconductor Corp CY62167G18-55BVXI

Name: CY62167G18-55BVXI
Brand: Cypress Semiconductor Corp
SKU: 3236452-CY62167G18-55BVXI
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: CY62167G18-55BVXI

Manufacturer:: Cypress Semiconductor Corp

Ventron No:: 3236452-CY62167G18-55BVXI

Description:: IC SRAM 16MBIT 55NS 48VFBGA

ECAD Model:

Datasheet:: CY62167G18-55BVXI

Specifications

Cypress Semiconductor Corp CY62167G18-55BVXI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY62167G18-55BVXI.

Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
48-VFBGA
Surface Mount
YES
Number of Pins
48
Operating Temperature
-40°C~85°C TA
Packaging
Tray
Published
2011
Series
MoBL®
JESD-609 Code
e1
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
48
ECCN Code
3A991.B.2.A
Terminal Finish
TIN SILVER COPPER
HTS Code
8542.32.00.41
Technology
SRAM - Asynchronous
Voltage - Supply
1.65V~2.2V
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Number of Functions
1
Supply Voltage
1.8V
Terminal Pitch
0.75mm
Reflow Temperature-Max (s)
NOT SPECIFIED
Supply Voltage-Max (Vsup)
2.2V
Supply Voltage-Min (Vsup)
1.65V
Memory Size
16Mb 2M x 8 1M x 16
Memory Type
Volatile
Memory Format
SRAM
Memory Interface
Parallel
Organization
1MX16
Memory Width
16
Write Cycle Time - Word, Page
55ns
Memory Density
16777216 bit
Access Time (Max)
55 ns
Alternate Memory Width
8
Height Seated (Max)
1mm
Length
8mm
Width
6mm
RoHS Status
ROHS3 Compliant

Description

CY62167G18-55BVXI Overview
This product has 48 pins and a JESD-609 code of e1. It has a Moisture Sensitivity Level (MSL) of 3, which means it can withstand up to 168 hours of exposure to moisture. The number of terminations is also 48. The reflow temperature is not specified. The maximum supply voltage is 2.2V. This product is a SRAM memory format with an organization of 1MX16, meaning it has 1 million addressable locations and each location can store 16 bits of data. The memory width is 16, indicating it can process 16 bits of data at a time. The write cycle time for a word or page is 55 nanoseconds.

CY62167G18-55BVXI Features
Package / Case: 48-VFBGA
48 Pins

CY62167G18-55BVXI Applications
There are a lot of Cypress Semiconductor Corp CY62167G18-55BVXI Memory applications.

personal computers
embedded logic
graphics card
printers
personal digital assistants
supercomputers
main computer memory
data buffer
networks
Cache memory

CY62167G18-55BVXI More Descriptions

SRAM - Asynchronous Memory IC 16Mb (2M x 8, 1M x 16) Parallel 55ns 48-VFBGA
SRAM Chip Async Single 1.8V 16M-Bit 1M x 16 55ns 48-Pin VFBGA Tray
Micropower Srams/Tray |Cypress Infineon Technologies CY62167G18-55BVXI
IC SRAM 16MBIT PARALLEL 48VFBGA

Product Comparison

The three parts on the right have similar specifications to CY62167G18-55BVXI.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Operating Temperature

Packaging

Published

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Technology

Voltage - Supply

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Reflow Temperature-Max (s)

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Memory Size

Memory Type

Memory Format

Memory Interface

Organization

Memory Width

Write Cycle Time - Word, Page

Memory Density

Access Time (Max)

Alternate Memory Width

Height Seated (Max)

Length

Width

RoHS Status

Pbfree Code

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

View Compare
CY62167G18-55BVXI

Cypress Semiconductor Corp

13 Weeks

Surface Mount

48-VFBGA

YES

48

-40°C~85°C TA

Tray

2011

MoBL®

e1

Active

3 (168 Hours)

48

3A991.B.2.A

TIN SILVER COPPER

8542.32.00.41

SRAM - Asynchronous

1.65V~2.2V

BOTTOM

NOT SPECIFIED

1

1.8V

0.75mm

NOT SPECIFIED

2.2V

1.65V

16Mb 2M x 8 1M x 16

Volatile

SRAM

Parallel

1MX16

16

55ns

16777216 bit

55 ns

8

1mm

8mm

6mm

ROHS3 Compliant

-

-

-

-

-

-

-
CY62146GE30-45ZSXIT

Cypress Semiconductor Corp

13 Weeks

Surface Mount

44-TSOP (0.400, 10.16mm Width)

-

-

-40°C~85°C TA

Tape & Reel (TR)

-

MoBL®

-

Active

3 (168 Hours)

-

-

-

-

SRAM - Asynchronous

2.2V~3.6V

-

-

-

-

-

-

-

-

4Mb 256K x 16

Volatile

SRAM

Parallel

-

-

45ns

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

CY62167G18-55BVXI vs CY62146GE30-45ZSXIT
CY62128DV30LL-55SXI

ON Semiconductor

-

Surface Mount

32-SOIC (0.445, 11.30mm Width)

YES

-

-40°C~85°C TA

Tube

-

MoBL®

e4

Obsolete

3 (168 Hours)

32

-

NICKEL PALLADIUM GOLD

-

SRAM - Asynchronous

2.2V~3.6V

DUAL

260

1

3V

1.27mm

-

3.6V

2.2V

1Mb 128K x 8

Volatile

SRAM

Parallel

128KX8

8

55ns

1048576 bit

55 ns

-

2.997mm

20.4465mm

11.303mm

ROHS3 Compliant

yes

unknown

20

32

R-PDSO-G32

COMMERCIAL

CY62167G18-55BVXI vs CY62128DV30LL-55SXI
CY62128BLL-70ZRXE

ON Semiconductor

-

Surface Mount

32-TFSOP (0.724, 18.40mm Width)

YES

-

-40°C~125°C TA

Tube

-

MoBL®

e3/e4

Obsolete

3 (168 Hours)

32

-

MATTE TIN/NICKEL PALLADIUM GOLD

-

SRAM - Asynchronous

4.5V~5.5V

DUAL

260

1

5V

0.5mm

-

5.5V

4.5V

1Mb 128K x 8

Volatile

SRAM

Parallel

128KX8

8

70ns

1048576 bit

70 ns

-

1.2mm

18.4mm

8mm

ROHS3 Compliant

yes

unknown

20

32

R-PDSO-G32

COMMERCIAL

CY62167G18-55BVXI vs CY62128BLL-70ZRXE