Cypress Semiconductor Corp CY62167G18-55BVXI
- Part Number:
- CY62167G18-55BVXI
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3236452-CY62167G18-55BVXI
- Description:
- IC SRAM 16MBIT 55NS 48VFBGA
- Datasheet:
- CY62167G18-55BVXI
Cypress Semiconductor Corp CY62167G18-55BVXI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY62167G18-55BVXI.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case48-VFBGA
- Surface MountYES
- Number of Pins48
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2011
- SeriesMoBL®
- JESD-609 Codee1
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- ECCN Code3A991.B.2.A
- Terminal FinishTIN SILVER COPPER
- HTS Code8542.32.00.41
- TechnologySRAM - Asynchronous
- Voltage - Supply1.65V~2.2V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.75mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- Supply Voltage-Max (Vsup)2.2V
- Supply Voltage-Min (Vsup)1.65V
- Memory Size16Mb 2M x 8 1M x 16
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization1MX16
- Memory Width16
- Write Cycle Time - Word, Page55ns
- Memory Density16777216 bit
- Access Time (Max)55 ns
- Alternate Memory Width8
- Height Seated (Max)1mm
- Length8mm
- Width6mm
- RoHS StatusROHS3 Compliant
CY62167G18-55BVXI Overview
This product has 48 pins and a JESD-609 code of e1. It has a Moisture Sensitivity Level (MSL) of 3, which means it can withstand up to 168 hours of exposure to moisture. The number of terminations is also 48. The reflow temperature is not specified. The maximum supply voltage is 2.2V. This product is a SRAM memory format with an organization of 1MX16, meaning it has 1 million addressable locations and each location can store 16 bits of data. The memory width is 16, indicating it can process 16 bits of data at a time. The write cycle time for a word or page is 55 nanoseconds.
CY62167G18-55BVXI Features
Package / Case: 48-VFBGA
48 Pins
CY62167G18-55BVXI Applications
There are a lot of Cypress Semiconductor Corp CY62167G18-55BVXI Memory applications.
personal computers
embedded logic
graphics card
printers
personal digital assistants
supercomputers
main computer memory
data buffer
networks
Cache memory
This product has 48 pins and a JESD-609 code of e1. It has a Moisture Sensitivity Level (MSL) of 3, which means it can withstand up to 168 hours of exposure to moisture. The number of terminations is also 48. The reflow temperature is not specified. The maximum supply voltage is 2.2V. This product is a SRAM memory format with an organization of 1MX16, meaning it has 1 million addressable locations and each location can store 16 bits of data. The memory width is 16, indicating it can process 16 bits of data at a time. The write cycle time for a word or page is 55 nanoseconds.
CY62167G18-55BVXI Features
Package / Case: 48-VFBGA
48 Pins
CY62167G18-55BVXI Applications
There are a lot of Cypress Semiconductor Corp CY62167G18-55BVXI Memory applications.
personal computers
embedded logic
graphics card
printers
personal digital assistants
supercomputers
main computer memory
data buffer
networks
Cache memory
CY62167G18-55BVXI More Descriptions
SRAM - Asynchronous Memory IC 16Mb (2M x 8, 1M x 16) Parallel 55ns 48-VFBGA
SRAM Chip Async Single 1.8V 16M-Bit 1M x 16 55ns 48-Pin VFBGA Tray
Micropower Srams/Tray |Cypress Infineon Technologies CY62167G18-55BVXI
IC SRAM 16MBIT PARALLEL 48VFBGA
SRAM Chip Async Single 1.8V 16M-Bit 1M x 16 55ns 48-Pin VFBGA Tray
Micropower Srams/Tray |Cypress Infineon Technologies CY62167G18-55BVXI
IC SRAM 16MBIT PARALLEL 48VFBGA
The three parts on the right have similar specifications to CY62167G18-55BVXI.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPublishedSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Supply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityAccess Time (Max)Alternate Memory WidthHeight Seated (Max)LengthWidthRoHS StatusPbfree CodeReach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusView Compare
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CY62167G18-55BVXI13 WeeksSurface Mount48-VFBGAYES48-40°C~85°C TATray2011MoBL®e1Active3 (168 Hours)483A991.B.2.ATIN SILVER COPPER8542.32.00.41SRAM - Asynchronous1.65V~2.2VBOTTOMNOT SPECIFIED11.8V0.75mmNOT SPECIFIED2.2V1.65V16Mb 2M x 8 1M x 16VolatileSRAMParallel1MX161655ns16777216 bit55 ns81mm8mm6mmROHS3 Compliant-------
-
13 WeeksSurface Mount44-TSOP (0.400, 10.16mm Width)---40°C~85°C TATape & Reel (TR)-MoBL®-Active3 (168 Hours)----SRAM - Asynchronous2.2V~3.6V--------4Mb 256K x 16VolatileSRAMParallel--45ns------ROHS3 Compliant------
-
-Surface Mount32-SOIC (0.445, 11.30mm Width)YES--40°C~85°C TATube-MoBL®e4Obsolete3 (168 Hours)32-NICKEL PALLADIUM GOLD-SRAM - Asynchronous2.2V~3.6VDUAL26013V1.27mm-3.6V2.2V1Mb 128K x 8VolatileSRAMParallel128KX8855ns1048576 bit55 ns-2.997mm20.4465mm11.303mmROHS3 Compliantyesunknown2032R-PDSO-G32COMMERCIAL
-
-Surface Mount32-TFSOP (0.724, 18.40mm Width)YES--40°C~125°C TATube-MoBL®e3/e4Obsolete3 (168 Hours)32-MATTE TIN/NICKEL PALLADIUM GOLD-SRAM - Asynchronous4.5V~5.5VDUAL26015V0.5mm-5.5V4.5V1Mb 128K x 8VolatileSRAMParallel128KX8870ns1048576 bit70 ns-1.2mm18.4mm8mmROHS3 Compliantyesunknown2032R-PDSO-G32COMMERCIAL
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