Part Number: MT47H256M8EB-25E AIT:C vs MT47H64M8SH-25E IT:H TR
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Part Number: | MT47H256M8EB-25E AIT:C | MT47H64M8SH-25E IT:H TR |
Manufacturer: | Micron Technology Inc. | Micron Technology Inc. |
Description: | IC SDRAM 2GBIT 400MHZ 60FBGA | Memory IC |
Quantity Available: | Available | Available |
Datasheets: | - | - |
Factory Lead Time | 4 Weeks | - |
Mounting Type | Surface Mount | Surface Mount |
Package / Case | 60-TFBGA | 60-TFBGA |
Surface Mount | YES | - |
Operating Temperature | -40°C~95°C TC | -40°C~95°C TC |
Packaging | Tray | Tape & Reel (TR) |
Published | 2014 | - |
Part Status | Last Time Buy | Active |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) | 3 (168 Hours) |
Number of Terminations | 60 | - |
ECCN Code | EAR99 | - |
Additional Feature | AUTO/SELF REFRESH | - |
HTS Code | 8542.32.00.36 | - |
Technology | SDRAM - DDR2 | SDRAM - DDR2 |
Voltage - Supply | 1.7V~1.9V | 1.7V~1.9V |
Terminal Position | BOTTOM | - |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | - |
Number of Functions | 1 | - |
Supply Voltage | 1.8V | - |
Terminal Pitch | 0.8mm | - |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | - |
Base Part Number | MT47H256M8 | - |
JESD-30 Code | R-PBGA-B60 | - |
Supply Voltage-Max (Vsup) | 1.9V | - |
Supply Voltage-Min (Vsup) | 1.7V | - |
Memory Size | 2Gb 256M x 8 | 512M 64M x 8 |
Number of Ports | 1 | - |
Memory Type | Volatile | Volatile |
Operating Mode | SYNCHRONOUS | - |
Clock Frequency | 400MHz | 400MHz |
Access Time | 400ps | 400ps |
Memory Format | DRAM | DRAM |
Memory Interface | Parallel | Parallel |
Organization | 256MX8 | - |
Memory Width | 8 | - |
Write Cycle Time - Word, Page | 15ns | 15ns |
Memory Density | 2147483648 bit | - |
Screening Level | AEC-Q100 | - |
Height Seated (Max) | 1.2mm | - |
Length | 11.5mm | - |
Width | 9mm | - |
RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
Submit RFQ: | Submit | Submit |