Part Number: IS61NVP51236B-200TQLI vs IS61C25616AL-10KLI-TR

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Part Number: IS61NVP51236B-200TQLI IS61C25616AL-10KLI-TR
Manufacturer: ISSI, Integrated Silicon Solution Inc ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 18MBIT 200MHZ 100TQFP Memory IC 4 Mb kb 50mA mA 16b b
Quantity Available: Available Available
Datasheets: - -
Factory Lead Time 12 Weeks 8 Weeks
Mounting Type Surface Mount Surface Mount
Package / Case 100-LQFP 44-BSOJ (0.400, 10.16mm Width)
Surface Mount YES -
Operating Temperature -40°C~85°C TA -40°C~85°C TA
Packaging Tray Tape & Reel (TR)
Part Status Active Active
Moisture Sensitivity Level (MSL) 3 (168 Hours) 2 (1 Year)
Number of Terminations 100 -
Technology SRAM - Synchronous, SDR SRAM - Asynchronous
Voltage - Supply 2.375V~2.625V 4.5V~5.5V
Terminal Position QUAD -
Peak Reflow Temperature (Cel) NOT SPECIFIED -
Number of Functions 1 -
Supply Voltage 2.5V -
Terminal Pitch 0.65mm -
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED -
JESD-30 Code R-PQFP-G100 -
Supply Voltage-Max (Vsup) 2.625V -
Supply Voltage-Min (Vsup) 2.375V -
Memory Size 18Mb 512K x 36 4Mb 256K x 16
Memory Type Volatile Volatile
Clock Frequency 200MHz -
Access Time 3ns 10ns
Memory Format SRAM SRAM
Memory Interface Parallel Parallel
Organization 512KX36 -
Memory Width 36 -
Memory Density 18874368 bit -
Height Seated (Max) 1.6mm -
Length 20mm -
Width 14mm -
RoHS Status ROHS3 Compliant ROHS3 Compliant
Number of Pins - 44
Supplier Device Package - 44-SOJ
Max Operating Temperature - 85°C
Min Operating Temperature - -40°C
Operating Supply Voltage - 5V
Interface - Parallel
Max Supply Voltage - 5.5V
Min Supply Voltage - 4.5V
Number of Ports - 1
Nominal Supply Current - 50mA
Write Cycle Time - Word, Page - 10ns
Address Bus Width - 18b
Density - 4 Mb
Sync/Async - Asynchronous
Word Size - 16b
Radiation Hardening - No
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