Part Number: S34ML04G204BHI010 vs S34ML08G101TFI000

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Part Number: S34ML04G204BHI010 S34ML08G101TFI000
Manufacturer: Cypress Semiconductor Corp Cypress Semiconductor Corp
Description: FLASH MEMORY NAND Memory IC 18.4mm mm
Quantity Available: Available Available
Datasheets: S34ML08G1 S34ML08G1
Factory Lead Time 6 Weeks -
Mounting Type Surface Mount -
Package / Case 63-VFBGA -
Surface Mount YES YES
Operating Temperature -40°C~85°C TA -
Packaging Tray Tray
Published 2016 -
Series ML-2 -
Part Status Discontinued Active
Moisture Sensitivity Level (MSL) 3 (168 Hours) 3 (168 Hours)
Number of Terminations 63 48
HTS Code 8542.32.00.51 -
Technology FLASH - NAND CMOS
Voltage - Supply 2.7V~3.6V -
Terminal Position BOTTOM DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED -
Number of Functions 1 1
Supply Voltage 3.3V 3V
Terminal Pitch 0.8mm 0.5mm
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED -
JESD-30 Code R-PBGA-B63 R-PDSO-G48
Qualification Status Not Qualified -
Supply Voltage-Max (Vsup) 3.6V 3.6V
Power Supplies 3/3.3V -
Supply Voltage-Min (Vsup) 2.7V 2.7V
Memory Size 4Gb 256M x 16 -
Memory Type Non-Volatile -
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Supply Current-Max 0.03mA -
Memory Format FLASH -
Memory Interface Parallel -
Organization 256MX16 1GX8
Memory Width 16 8
Write Cycle Time - Word, Page 25ns -
Standby Current-Max 0.00005A -
Memory Density 4294967296 bit 8589934592 bit
Access Time (Max) 25 ns -
Programming Voltage 3V 3V
Data Polling NO -
Toggle Bit NO -
Command User Interface YES -
Number of Sectors/Size 4K -
Sector Size 64K -
Page Size 1Kwords -
Ready/Busy YES -
Height Seated (Max) 1mm 1.2mm
Length 11mm 18.4mm
Width 9mm 12mm
RoHS Status ROHS3 Compliant RoHS Compliant
JESD-609 Code - e3
Terminal Finish - Matte Tin (Sn)
Terminal Form - GULL WING
Operating Temperature (Max) - 85°C
Operating Temperature (Min) - -40°C
Temperature Grade - INDUSTRIAL
Parallel/Serial - PARALLEL
Memory IC Type - FLASH
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