Cypress Semiconductor Corp S34ML04G204BHI010
- Part Number:
- S34ML04G204BHI010
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3233495-S34ML04G204BHI010
- Description:
- FLASH MEMORY NAND
- Datasheet:
- S34ML08G1
Cypress Semiconductor Corp S34ML04G204BHI010 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S34ML04G204BHI010.
- Factory Lead Time6 Weeks
- Mounting TypeSurface Mount
- Package / Case63-VFBGA
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2016
- SeriesML-2
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations63
- HTS Code8542.32.00.51
- TechnologyFLASH - NAND
- Voltage - Supply2.7V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PBGA-B63
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)3.6V
- Power Supplies3/3.3V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size4Gb 256M x 16
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Supply Current-Max0.03mA
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization256MX16
- Memory Width16
- Write Cycle Time - Word, Page25ns
- Standby Current-Max0.00005A
- Memory Density4294967296 bit
- Access Time (Max)25 ns
- Programming Voltage3V
- Data PollingNO
- Toggle BitNO
- Command User InterfaceYES
- Number of Sectors/Size4K
- Sector Size64K
- Page Size1Kwords
- Ready/BusyYES
- Height Seated (Max)1mm
- Length11mm
- Width9mm
- RoHS StatusROHS3 Compliant
S34ML04G204BHI010 Overview
The ML-2 series product comes in a 63-VFBGA surface mount package and is designed with FLASH-NAND technology. It operates at a voltage supply range of 2.7V to 3.6V and has a memory size of 4Gb, with 256M x 16 configuration. The command user interface allows for easy operation, and the page size is 1Kwords. Additionally, the product features a ready/busy indicator for efficient functionality.
S34ML04G204BHI010 Features
Package / Case: 63-VFBGA
S34ML04G204BHI010 Applications
There are a lot of Cypress Semiconductor Corp
S34ML04G204BHI010 Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
The ML-2 series product comes in a 63-VFBGA surface mount package and is designed with FLASH-NAND technology. It operates at a voltage supply range of 2.7V to 3.6V and has a memory size of 4Gb, with 256M x 16 configuration. The command user interface allows for easy operation, and the page size is 1Kwords. Additionally, the product features a ready/busy indicator for efficient functionality.
S34ML04G204BHI010 Features
Package / Case: 63-VFBGA
S34ML04G204BHI010 Applications
There are a lot of Cypress Semiconductor Corp
S34ML04G204BHI010 Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
S34ML04G204BHI010 More Descriptions
8542.32.00.51 Surface Mount Tray 256MX16 ic memory 25ns 9mm 0.00005A 4294967296bit
FLASH - NAND Memory IC 4Gb (256M x 16) Parallel 63-BGA (11x9)
Flash, 256MX16, 25ns, PBGA63
IC FLASH 4GBIT PARALLEL 63BGA
FLASH MEMORY NAND
FLASH - NAND Memory IC 4Gb (256M x 16) Parallel 63-BGA (11x9)
Flash, 256MX16, 25ns, PBGA63
IC FLASH 4GBIT PARALLEL 63BGA
FLASH MEMORY NAND
The three parts on the right have similar specifications to S34ML04G204BHI010.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeSupply Current-MaxMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityAccess Time (Max)Programming VoltageData PollingToggle BitCommand User InterfaceNumber of Sectors/SizeSector SizePage SizeReady/BusyHeight Seated (Max)LengthWidthRoHS StatusTerminal FormOperating Temperature (Max)Operating Temperature (Min)Temperature GradeParallel/SerialMemory IC TypeJESD-609 CodeTerminal FinishView Compare
-
S34ML04G204BHI0106 WeeksSurface Mount63-VFBGAYES-40°C~85°C TATray2016ML-2Discontinued3 (168 Hours)638542.32.00.51FLASH - NAND2.7V~3.6VBOTTOMNOT SPECIFIED13.3V0.8mmNOT SPECIFIEDR-PBGA-B63Not Qualified3.6V3/3.3V2.7V4Gb 256M x 16Non-VolatileASYNCHRONOUS0.03mAFLASHParallel256MX161625ns0.00005A4294967296 bit25 ns3VNONOYES4K64K1KwordsYES1mm11mm9mmROHS3 Compliant---------
-
---YES-Tray--Active3 (168 Hours)63-CMOS-BOTTOMNOT SPECIFIED13.3V0.8mmNOT SPECIFIEDR-PBGA-B63-3.6V-2.7V--ASYNCHRONOUS---128MX88--1073741824 bit-3V-------1mm11mm9mmRoHS CompliantBALL105°C-40°CINDUSTRIALPARALLELFLASH--
-
---YES-Tray--Active3 (168 Hours)48-CMOS-DUAL-13V0.5mm-R-PDSO-G48-3.6V-2.7V--ASYNCHRONOUS---1GX88--8589934592 bit-3V-------1.2mm18.4mm12mmRoHS CompliantGULL WING85°C-40°CINDUSTRIALPARALLELFLASHe3Matte Tin (Sn)
-
---YES-Tray--Active3 (168 Hours)63-CMOS-BOTTOMNOT SPECIFIED13V0.8mmNOT SPECIFIEDR-PBGA-B63-3.6V-2.7V--ASYNCHRONOUS---1GX88--8589934592 bit-3V-------1mm11mm9mmRoHS CompliantBALL85°C-40°CINDUSTRIALPARALLELFLASH--
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