Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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Part Number: |
CY62147G18-55ZSXI |
CY62137CV30LL-70BVXE |
Manufacturer: |
Cypress Semiconductor Corp |
ON Semiconductor |
Description: |
IC SRAM 4MB 55NS 44TSOPII |
MoBL® Memory IC MoBL® Series |
Quantity Available: |
Available |
Available |
Datasheets: |
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CY62137CV(30/33) MoBL
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Factory Lead Time |
13 Weeks |
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Mounting Type |
Surface Mount |
Surface Mount |
Package / Case |
44-TSOP (0.400, 10.16mm Width) |
48-VFBGA |
Surface Mount |
YES |
- |
Operating Temperature |
-40°C~85°C TA |
-40°C~125°C TA |
Packaging |
Tray |
Tray |
Published |
2012 |
- |
Series |
MoBL® |
MoBL® |
Part Status |
Active |
Obsolete |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
3 (168 Hours) |
Number of Terminations |
44 |
- |
ECCN Code |
3A991.B.2.A |
- |
HTS Code |
8542.32.00.41 |
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Technology |
SRAM - Asynchronous |
SRAM - Asynchronous |
Voltage - Supply |
1.65V~2.2V |
2.7V~3.3V |
Terminal Position |
DUAL |
- |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
- |
Number of Functions |
1 |
- |
Supply Voltage |
1.8V |
- |
Terminal Pitch |
0.8mm |
- |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
- |
JESD-30 Code |
R-PDSO-G44 |
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Supply Voltage-Max (Vsup) |
2.2V |
- |
Supply Voltage-Min (Vsup) |
1.65V |
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Memory Size |
4Mb 256K x 16 |
2Mb 128K x 16 |
Memory Type |
Volatile |
Volatile |
Memory Format |
SRAM |
SRAM |
Memory Interface |
Parallel |
Parallel |
Organization |
256KX16 |
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Memory Width |
16 |
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Write Cycle Time - Word, Page |
55ns |
70ns |
Memory Density |
4194304 bit |
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Access Time (Max) |
55 ns |
- |
Height Seated (Max) |
1.194mm |
- |
Length |
18.415mm |
- |
Width |
10.16mm |
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RoHS Status |
ROHS3 Compliant |
ROHS3 Compliant |
Supplier Device Package |
- |
48-VFBGA (6x8) |
Access Time |
- |
70ns |
Submit RFQ: |
Submit |
Submit |