Cypress Semiconductor Corp CY62147G18-55ZSXI

Name: CY62147G18-55ZSXI
Brand: Cypress Semiconductor Corp
SKU: 3230009-CY62147G18-55ZSXI
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: CY62147G18-55ZSXI

Manufacturer:: Cypress Semiconductor Corp

Ventron No:: 3230009-CY62147G18-55ZSXI

Description:: IC SRAM 4MB 55NS 44TSOPII

ECAD Model:

Datasheet:: CY62147G18-55ZSXI

Specifications

Cypress Semiconductor Corp CY62147G18-55ZSXI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY62147G18-55ZSXI.

Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
44-TSOP (0.400, 10.16mm Width)
Surface Mount
YES
Operating Temperature
-40°C~85°C TA
Packaging
Tray
Published
2012
Series
MoBL®
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
44
ECCN Code
3A991.B.2.A
HTS Code
8542.32.00.41
Technology
SRAM - Asynchronous
Voltage - Supply
1.65V~2.2V
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Number of Functions
1
Supply Voltage
1.8V
Terminal Pitch
0.8mm
Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G44
Supply Voltage-Max (Vsup)
2.2V
Supply Voltage-Min (Vsup)
1.65V
Memory Size
4Mb 256K x 16
Memory Type
Volatile
Memory Format
SRAM
Memory Interface
Parallel
Organization
256KX16
Memory Width
16
Write Cycle Time - Word, Page
55ns
Memory Density
4194304 bit
Access Time (Max)
55 ns
Height Seated (Max)
1.194mm
Length
18.415mm
Width
10.16mm
RoHS Status
ROHS3 Compliant

Description

CY62147G18-55ZSXI Overview
The MoBL® series, first published in 2012, boasts a Moisture Sensitivity Level (MSL) of 3, allowing for a storage time of 168 hours. This product falls under HTS Code 8542.32.00.41 and operates at a supply voltage of 1.8V with a terminal pitch of 0.8mm. The reflow temperature for this product is not specified. It is compatible with SRAM memory format and has a memory density of 4194304 bits. As a testament to our commitment to environmental sustainability, this product is ROHS3 compliant. With these specifications, our product offers high performance and reliability for a wide range of applications.

CY62147G18-55ZSXI Features
Package / Case: 44-TSOP (0.400, 10.16mm Width)

CY62147G18-55ZSXI Applications
There are a lot of Cypress Semiconductor Corp CY62147G18-55ZSXI Memory applications.

eSRAM
networks
main computer memory
graphics card
supercomputers
multimedia computers
nonvolatile BIOS memory
networking
hard disk drive (HDD)
printers

CY62147G18-55ZSXI More Descriptions

Active 2012 DUAL Volatile SRAM Memory -40C~85C TA 1.65V 4194304bit 10.16mm
Asynchronous SRAM, 4096 Kb Density, 55 ns Speed, SOP-44, RoHSCypress Semiconductor SCT
IC SRAM 4MBIT PARALLEL 44TSOP II

Product Comparison

The three parts on the right have similar specifications to CY62147G18-55ZSXI.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Operating Temperature

Packaging

Published

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

HTS Code

Technology

Voltage - Supply

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Reflow Temperature-Max (s)

JESD-30 Code

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Memory Size

Memory Type

Memory Format

Memory Interface

Organization

Memory Width

Write Cycle Time - Word, Page

Memory Density

Access Time (Max)

Height Seated (Max)

Length

Width

RoHS Status

Supplier Device Package

Access Time

JESD-609 Code

Pbfree Code

Terminal Finish

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

View Compare
CY62147G18-55ZSXI

Cypress Semiconductor Corp

13 Weeks

Surface Mount

44-TSOP (0.400, 10.16mm Width)

YES

-40°C~85°C TA

Tray

2012

MoBL®

Active

3 (168 Hours)

44

3A991.B.2.A

8542.32.00.41

SRAM - Asynchronous

1.65V~2.2V

DUAL

NOT SPECIFIED

1

1.8V

0.8mm

NOT SPECIFIED

R-PDSO-G44

2.2V

1.65V

4Mb 256K x 16

Volatile

SRAM

Parallel

256KX16

16

55ns

4194304 bit

55 ns

1.194mm

18.415mm

10.16mm

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-
CY62137CV30LL-70BVXE

ON Semiconductor

-

Surface Mount

48-VFBGA

-

-40°C~125°C TA

Tray

-

MoBL®

Obsolete

3 (168 Hours)

-

-

-

SRAM - Asynchronous

2.7V~3.3V

-

-

-

-

-

-

-

-

-

2Mb 128K x 16

Volatile

SRAM

Parallel

-

-

70ns

-

-

-

-

-

ROHS3 Compliant

48-VFBGA (6x8)

70ns

-

-

-

-

-

-

-

CY62147G18-55ZSXI vs CY62137CV30LL-70BVXE
CY62138FV30LL-45ZSXI

ON Semiconductor

-

Surface Mount

44-TSOP (0.400, 10.16mm Width)

YES

-40°C~85°C TA

Tube

-

MoBL®

Obsolete

3 (168 Hours)

32

-

-

SRAM - Asynchronous

2.2V~3.6V

DUAL

260

1

3V

1.27mm

-

R-PDSO-G32

3.6V

2.2V

2Mb 256K x 8

Volatile

SRAM

Parallel

256KX8

8

45ns

2097152 bit

45 ns

1.2mm

20.95mm

10.16mm

ROHS3 Compliant

-

-

e4

yes

NICKEL PALLADIUM GOLD

unknown

20

32

COMMERCIAL

CY62147G18-55ZSXI vs CY62138FV30LL-45ZSXI
CY62128BLL-70ZRXE

ON Semiconductor

-

Surface Mount

32-TFSOP (0.724, 18.40mm Width)

YES

-40°C~125°C TA

Tube

-

MoBL®

Obsolete

3 (168 Hours)

32

-

-

SRAM - Asynchronous

4.5V~5.5V

DUAL

260

1

5V

0.5mm

-

R-PDSO-G32

5.5V

4.5V

1Mb 128K x 8

Volatile

SRAM

Parallel

128KX8

8

70ns

1048576 bit

70 ns

1.2mm

18.4mm

8mm

ROHS3 Compliant

-

-

e3/e4

yes

MATTE TIN/NICKEL PALLADIUM GOLD

unknown

20

32

COMMERCIAL

CY62147G18-55ZSXI vs CY62128BLL-70ZRXE