Part Number: CY62147G18-55BVXI vs CY62128BNLL-70ZAXE
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Part Number: | CY62147G18-55BVXI | CY62128BNLL-70ZAXE |
Manufacturer: | Cypress Semiconductor Corp | ON Semiconductor |
Description: | IC SRAM 4MB 55NS 48BGA | MoBL® 32 Pin Memory IC MoBL® Series 11.8mm mm |
Quantity Available: | Available | Available |
Datasheets: | - | CY62128BN MoBL |
Factory Lead Time | 13 Weeks | - |
Mounting Type | Surface Mount | Surface Mount |
Package / Case | 48-VFBGA | 32-TFSOP (0.465, 11.80mm Width) |
Surface Mount | YES | YES |
Operating Temperature | -40°C~85°C TA | -40°C~125°C TA |
Packaging | Tray | Tube |
Published | 2012 | - |
Series | MoBL® | MoBL® |
Part Status | Active | Obsolete |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) | 3 (168 Hours) |
Number of Terminations | 48 | 32 |
ECCN Code | 3A991.B.2.A | - |
HTS Code | 8542.32.00.41 | - |
Technology | SRAM - Asynchronous | SRAM - Asynchronous |
Voltage - Supply | 1.65V~2.2V | 4.5V~5.5V |
Terminal Position | BOTTOM | DUAL |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | 260 |
Number of Functions | 1 | 1 |
Supply Voltage | 1.8V | 5V |
Terminal Pitch | 0.75mm | 0.5mm |
Reflow Temperature-Max (s) | NOT SPECIFIED | - |
JESD-30 Code | R-PBGA-B48 | R-PDSO-G32 |
Supply Voltage-Max (Vsup) | 2.2V | 5.5V |
Supply Voltage-Min (Vsup) | 1.65V | 4.5V |
Memory Size | 4Mb 256K x 16 | 1Mb 128K x 8 |
Memory Type | Volatile | Volatile |
Memory Format | SRAM | SRAM |
Memory Interface | Parallel | Parallel |
Organization | 256KX16 | 128KX8 |
Memory Width | 16 | 8 |
Write Cycle Time - Word, Page | 55ns | 70ns |
Memory Density | 4194304 bit | 1048576 bit |
Access Time (Max) | 55 ns | 70 ns |
Height Seated (Max) | 1mm | 1.2mm |
Length | 8mm | 11.8mm |
Width | 6mm | 8mm |
RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
Pbfree Code | - | yes |
Terminal Finish | - | NOT SPECIFIED |
Reach Compliance Code | - | unknown |
Time@Peak Reflow Temperature-Max (s) | - | 20 |
Pin Count | - | 32 |
Qualification Status | - | COMMERCIAL |
Submit RFQ: | Submit | Submit |