Part Number: APT40GP90J vs APT40GP60JDQ2

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Part Number: APT40GP90J APT40GP60JDQ2
Manufacturer: Microsemi Corporation Microsemi Corporation
Description: IGBT 900V 68A 284W SOT227 IGBT 600V 86A 284W SOT227
Quantity Available: Available Available
Datasheets: - -
Mount Chassis Mount, Screw Chassis Mount, Screw
Mounting Type Chassis Mount Chassis Mount
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC
Number of Pins 4 4
Transistor Element Material SILICON SILICON
Operating Temperature -55°C~150°C TJ -55°C~150°C TJ
Series POWER MOS 7® POWER MOS 7®
Published 1999 1999
Pbfree Code yes yes
Part Status Not For New Designs Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 4 4
Additional Feature LOW CONDUCTION LOSS -
Subcategory Insulated Gate BIP Transistors Insulated Gate BIP Transistors
Max Power Dissipation 284W 284W
Terminal Position UPPER UPPER
Terminal Form UNSPECIFIED UNSPECIFIED
Pin Count 4 4
Number of Elements 1 1
Configuration Single Single
Case Connection ISOLATED ISOLATED
Power - Max 284W -
Transistor Application POWER CONTROL POWER CONTROL
Polarity/Channel Type N-CHANNEL N-CHANNEL
Input Standard Standard
Collector Emitter Voltage (VCEO) 900V 600V
Max Collector Current 68A 86A
Current - Collector Cutoff (Max) 250μA 500μA
Collector Emitter Breakdown Voltage 900V 600V
Input Capacitance 3.3nF 4.61nF
Turn On Time 43 ns 49 ns
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 40A 2.7V @ 15V, 40A
Turn Off Time-Nom (toff) 215 ns 160 ns
IGBT Type PT PT
NTC Thermistor No No
Gate-Emitter Voltage-Max 20V 30V
Input Capacitance (Cies) @ Vce 3.3nF @ 25V 4.61nF @ 25V
VCEsat-Max 3.9 V -
RoHS Status RoHS Compliant RoHS Compliant
Factory Lead Time - 30 Weeks
JESD-609 Code - e1
Terminal Finish - Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC - 600V
Current Rating - 86A
Lead Free - Lead Free
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