Microsemi Corporation APT40GP90J
- Part Number:
- APT40GP90J
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3071792-APT40GP90J
- Description:
- IGBT 900V 68A 284W SOT227
- Datasheet:
- APT40GP90J
Microsemi Corporation APT40GP90J technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT40GP90J.
- MountChassis Mount, Screw
- Mounting TypeChassis Mount
- Package / CaseSOT-227-4, miniBLOC
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- SeriesPOWER MOS 7®
- Published1999
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- Additional FeatureLOW CONDUCTION LOSS
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation284W
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- Pin Count4
- Number of Elements1
- ConfigurationSingle
- Case ConnectionISOLATED
- Power - Max284W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- InputStandard
- Collector Emitter Voltage (VCEO)900V
- Max Collector Current68A
- Current - Collector Cutoff (Max)250μA
- Collector Emitter Breakdown Voltage900V
- Input Capacitance3.3nF
- Turn On Time43 ns
- Vce(on) (Max) @ Vge, Ic3.9V @ 15V, 40A
- Turn Off Time-Nom (toff)215 ns
- IGBT TypePT
- NTC ThermistorNo
- Gate-Emitter Voltage-Max20V
- Input Capacitance (Cies) @ Vce3.3nF @ 25V
- VCEsat-Max3.9 V
- RoHS StatusRoHS Compliant
APT40GP90J Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APT40GP90J or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT40GP90J. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APT40GP90J or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT40GP90J. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APT40GP90J More Descriptions
Fg, Igbt, 900V, 40A, Sot-227 4 Sot-227 Tube Rohs Compliant: Yes |Microchip APT40GP90J
Trans IGBT Chip N-CH 900V 68A 4-Pin SOT-227
Insulated Gate Bipolar Transistor, 68A I(C), 900V V(BR)CES, N-Channel
IGBT MODULE 900V 68A 284W ISOTOP
Trans IGBT Chip N-CH 900V 68A 4-Pin SOT-227
Insulated Gate Bipolar Transistor, 68A I(C), 900V V(BR)CES, N-Channel
IGBT MODULE 900V 68A 284W ISOTOP
The three parts on the right have similar specifications to APT40GP90J.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperatureSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureSubcategoryMax Power DissipationTerminal PositionTerminal FormPin CountNumber of ElementsConfigurationCase ConnectionPower - MaxTransistor ApplicationPolarity/Channel TypeInputCollector Emitter Voltage (VCEO)Max Collector CurrentCurrent - Collector Cutoff (Max)Collector Emitter Breakdown VoltageInput CapacitanceTurn On TimeVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeNTC ThermistorGate-Emitter Voltage-MaxInput Capacitance (Cies) @ VceVCEsat-MaxRoHS StatusFactory Lead TimeJESD-609 CodeTerminal FinishVoltage - Rated DCCurrent RatingLead FreeLifecycle StatusECCN CodeVoltage - Collector Emitter Breakdown (Max)View Compare
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APT40GP90JChassis Mount, ScrewChassis MountSOT-227-4, miniBLOC4SILICON-55°C~150°C TJPOWER MOS 7®1999yesNot For New Designs1 (Unlimited)4LOW CONDUCTION LOSSInsulated Gate BIP Transistors284WUPPERUNSPECIFIED41SingleISOLATED284WPOWER CONTROLN-CHANNELStandard900V68A250μA900V3.3nF43 ns3.9V @ 15V, 40A215 nsPTNo20V3.3nF @ 25V3.9 VRoHS Compliant----------
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Chassis Mount, ScrewChassis MountSOT-227-4, miniBLOC4SILICON-55°C~150°C TJPOWER MOS 7®1999yesActive1 (Unlimited)4-Insulated Gate BIP Transistors284WUPPERUNSPECIFIED41SingleISOLATED-POWER CONTROLN-CHANNELStandard600V86A500μA600V4.61nF49 ns2.7V @ 15V, 40A160 nsPTNo30V4.61nF @ 25V-RoHS Compliant30 Weekse1Tin/Silver/Copper (Sn/Ag/Cu)600V86ALead Free---
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Chassis, Screw, StudChassis, Stud MountSOT-227-4, miniBLOC4--55°C~175°C TJ-2012-Active1 (Unlimited)--Insulated Gate BIP Transistors220W---1Single-220W--Standard2.25V65A250μA1.2kV1.95nF-2.25V @ 15V, 35A-Trench Field StopNo20V1.95nF @ 25V-RoHS Compliant36 Weeks-----IN PRODUCTION (Last Updated: 2 weeks ago)EAR991200V
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Chassis, Screw, StudChassis, Stud MountSOT-227-4, miniBLOC4--55°C~175°C TJ---Active1 (Unlimited)--Insulated Gate BIP Transistors220W---1Single-220W--Standard2.25V65A250μA1.2kV1.95nF-2.25V @ 15V, 35A-Trench Field StopNo20V1.95nF @ 25V-RoHS Compliant36 Weeks-----IN PRODUCTION (Last Updated: 2 weeks ago)EAR991200V
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