Rohm Semiconductor 2SC4132T100R

2SC4132T100R Overview
In this device, the DC current gain is 180 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 100mA, 1A.A 2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1.5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 80MHz.Input voltage breakdown is available at 120V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

2SC4132T100R Features
the DC current gain for this device is 180 @ 100mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 80MHz


2SC4132T100R Applications
There are a lot of ROHM Semiconductor
2SC4132T100R applications of single BJT transistors.


Inverter
Interface
Driver
Muting