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2N6766

IXYS 2N6766

Part Number:
2N6766
Manufacturer:
IXYS
Ventron No:
5524146-2N6766
Description:
High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series
ECAD Model:
Datasheet:
2N6766

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Description
Images are for reference only.See Product Specifications for product details.If you are interested to buy IXYS Corporation 2N6766.
2N6766 More Descriptions
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
N CH MOSFET, 200V, 30A, TO-204AE; Transi; N CH MOSFET, 200V, 30A, TO-204AE; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:200V; On Resistance Rds(on):85mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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