SEME-LAB 2N5323
- Part Number:
- 2N5323
- Manufacturer:
- SEME-LAB
- Ventron No:
- 5643302-2N5323
- Description:
- HIGH SPEED MEDIUM VOLTAGE SWITCHES
- Datasheet:
- 2N5/FTSO5/MPS5
SEME-LAB 2N5323 technical specifications, attributes, parameters and parts with similar specifications to SEME-LAB 2N5323.
- Mounting TypeThrough Hole
- Package / CaseTO-205AA, TO-5-3 Metal Can
- Supplier Device PackageTO-5
- PackagingBulk
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Base Part Number2N5323
- Power - Max10W
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 500mA 4V
- Vce Saturation (Max) @ Ib, Ic1.2V @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)2A
- RoHS StatusNon-RoHS Compliant
2N5323 Description
The ON Semiconductor 2N5323 is a -50V PNP Bipolar Transistor capable of 10W power dissipation and 2A collector current.
2N5323 Features
Multicomp Pro products are rated 4.6 out of 5 stars
12-month limited warranty *view Terms & Conditions for details
96% of customers would recommend to a friend
-75V Collector to base voltage (VCBO)
-5V Emitter to base voltage (VEBO)
17.5??C/W Thermal resistance, junction to case
2N5323 Applications
Industrial
The ON Semiconductor 2N5323 is a -50V PNP Bipolar Transistor capable of 10W power dissipation and 2A collector current.
2N5323 Features
Multicomp Pro products are rated 4.6 out of 5 stars
12-month limited warranty *view Terms & Conditions for details
96% of customers would recommend to a friend
-75V Collector to base voltage (VCBO)
-5V Emitter to base voltage (VEBO)
17.5??C/W Thermal resistance, junction to case
2N5323 Applications
Industrial
2N5323 More Descriptions
MULTICOMP# 2N5323, 2N Ser ies 50 V 2 A PNP Through Hole Silicon Switching Tr ansistor - TO-39
Transistor GP BJT PNP 50V 2A 3-Pin TO-39Avnet Japan
1200 mA 50 V PNP Si SMALL SIGNAL TRANSISTOR TO-205AD
TRANSISTOR; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -50V; Transition Frequency ft: -; Power Dissipation Pd: 10W; DC Collector Current: 2A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO-39; No. of P
Bipolar Transistor; Transistor Polarity:P Channel; Power Dissipation, Pd:10W; Package/Case:TO-39; C-E Breakdown Voltage:50V; DC Collector Current:2A; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes
Transistor GP BJT PNP 50V 2A 3-Pin TO-39Avnet Japan
1200 mA 50 V PNP Si SMALL SIGNAL TRANSISTOR TO-205AD
TRANSISTOR; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -50V; Transition Frequency ft: -; Power Dissipation Pd: 10W; DC Collector Current: 2A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO-39; No. of P
Bipolar Transistor; Transistor Polarity:P Channel; Power Dissipation, Pd:10W; Package/Case:TO-39; C-E Breakdown Voltage:50V; DC Collector Current:2A; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes
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