2N5109

Microsemi Corporation 2N5109

Part Number:
2N5109
Manufacturer:
Microsemi Corporation
Ventron No:
3553708-2N5109
Description:
TRANS RF NPN 2.5W 400MA TO39
ECAD Model:
Datasheet:
2N5109

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Specifications
Microsemi Corporation 2N5109 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N5109.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Package / Case
    TO-39
  • Published
    2011
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -65°C
  • HTS Code
    8541.29.00.75
  • Subcategory
    Other Transistors
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    O-MBCY-W3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Polarity
    NPN
  • Power Dissipation-Max
    1W
  • Element Configuration
    Single
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    1.2 GHz
  • Collector Emitter Voltage (VCEO)
    20V
  • Max Collector Current
    400mA
  • Collector Emitter Breakdown Voltage
    20V
  • Gain
    11 dB
  • Transition Frequency
    1200MHz
  • Collector Emitter Saturation Voltage
    500mV
  • Power - Output
    1W
  • Frequency - Transition
    1.2GHz
  • Collector Base Voltage (VCBO)
    40V
  • Emitter Base Voltage (VEBO)
    3V
  • hFE Min
    70
  • Continuous Collector Current
    400mA
  • Highest Frequency Band
    VERY HIGH FREQUENCY B
  • Collector-Base Capacitance-Max
    3.5pF
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
Description: The Central Semiconductor 2N5109 is a NPN Bipolar Transistor designed for use in wide band amplifier applications. It has a maximum collector-emitter voltage of 40V and a maximum collector current of 0.2A. It is rated for a maximum power dissipation of 2W.

Features:
- NPN Bipolar Transistor
- Wide band amplifier applications
- Maximum collector-emitter voltage of 40V
- Maximum collector current of 0.2A
- Maximum power dissipation of 2W

Applications:
- Audio amplifiers
- Radio frequency amplifiers
- High frequency amplifiers
- Low noise amplifiers
- Switching circuits
- Voltage regulators
2N5109 More Descriptions
French Electronic Distributor since 1988
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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