Microsemi Corporation 2N5109
- Part Number:
- 2N5109
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3553708-2N5109
- Description:
- TRANS RF NPN 2.5W 400MA TO39
- Datasheet:
- 2N5109
Microsemi Corporation 2N5109 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N5109.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Package / CaseTO-39
- Published2011
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- HTS Code8541.29.00.75
- SubcategoryOther Transistors
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeO-MBCY-W3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityNPN
- Power Dissipation-Max1W
- Element ConfigurationSingle
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product1.2 GHz
- Collector Emitter Voltage (VCEO)20V
- Max Collector Current400mA
- Collector Emitter Breakdown Voltage20V
- Gain11 dB
- Transition Frequency1200MHz
- Collector Emitter Saturation Voltage500mV
- Power - Output1W
- Frequency - Transition1.2GHz
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)3V
- hFE Min70
- Continuous Collector Current400mA
- Highest Frequency BandVERY HIGH FREQUENCY B
- Collector-Base Capacitance-Max3.5pF
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
Description: The Central Semiconductor 2N5109 is a NPN Bipolar Transistor designed for use in wide band amplifier applications. It has a maximum collector-emitter voltage of 40V and a maximum collector current of 0.2A. It is rated for a maximum power dissipation of 2W.
Features:
- NPN Bipolar Transistor
- Wide band amplifier applications
- Maximum collector-emitter voltage of 40V
- Maximum collector current of 0.2A
- Maximum power dissipation of 2W
Applications:
- Audio amplifiers
- Radio frequency amplifiers
- High frequency amplifiers
- Low noise amplifiers
- Switching circuits
- Voltage regulators
Features:
- NPN Bipolar Transistor
- Wide band amplifier applications
- Maximum collector-emitter voltage of 40V
- Maximum collector current of 0.2A
- Maximum power dissipation of 2W
Applications:
- Audio amplifiers
- Radio frequency amplifiers
- High frequency amplifiers
- Low noise amplifiers
- Switching circuits
- Voltage regulators
2N5109 More Descriptions
French Electronic Distributor since 1988
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