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2N4124G

ON Semiconductor 2N4124G

Part Number:
2N4124G
Manufacturer:
ON Semiconductor
Ventron No:
2465923-2N4124G
Description:
TRANS NPN 25V 0.2A TO92
ECAD Model:
Datasheet:
2N4124G

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Specifications
ON Semiconductor 2N4124G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N4124G.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    NOT SPECIFIED
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    O-PBCY-T3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    625mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 2mA 1V
  • Current - Collector Cutoff (Max)
    50nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 5mA, 50mA
  • Voltage - Collector Emitter Breakdown (Max)
    25V
  • Current - Collector (Ic) (Max)
    200mA
  • Transition Frequency
    300MHz
  • Frequency - Transition
    300MHz
  • RoHS Status
    ROHS3 Compliant
Description
2N4124G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 2mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 5mA, 50mA.The part has a transition frequency of 300MHz.Device displays Collector Emitter Breakdown (25V maximal voltage).

2N4124G Features
the DC current gain for this device is 120 @ 2mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
a transition frequency of 300MHz


2N4124G Applications
There are a lot of Rochester Electronics, LLC
2N4124G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N4124G More Descriptions
Transistor, Bipolar,Si,NPN,General Purpose,VCEO 25VDC,IC 200mA,PD 1.5W,TO-92
NPN Bipolar Transistor, TO-92 25 V, 0.2 A
Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Bulk Through Hole General Purpose Single Bipolar (BJT) Transistor 120 @ 2mA 1V 50nA ICBO 625mW 300MHz
Transistor, NPN, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Transition Frequency ft:300MHz; Power Dissipation Pd:625mW;
TRANSISTOR, NPN, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 25V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 625mW; DC Collector Current: 200mA; DC Current Gain hFE: 300hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 50mA; Current Ic hFE: 360mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 60; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Through Hole
Product Comparison
The three parts on the right have similar specifications to 2N4124G.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Frequency - Transition
    RoHS Status
    Mount
    Number of Pins
    Published
    JESD-609 Code
    ECCN Code
    Subcategory
    Max Power Dissipation
    Terminal Form
    Element Configuration
    Operating Mode
    Power Dissipation
    FET Type
    Input Capacitance (Ciss) (Max) @ Vds
    Breakdown Voltage
    Gate to Source Voltage (Vgs)
    FET Technology
    Feedback Cap-Max (Crss)
    Current - Drain (Idss) @ Vds (Vgs=0)
    Voltage - Cutoff (VGS off) @ Id
    Voltage - Breakdown (V(BR)GSS)
    REACH SVHC
    Radiation Hardening
    Lead Free
    Reach Compliance Code
    View Compare
  • 2N4124G
    2N4124G
    ON Semiconductor
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    NO
    SILICON
    -55°C~150°C TJ
    Bulk
    yes
    Obsolete
    1 (Unlimited)
    3
    NOT SPECIFIED
    BOTTOM
    NOT SPECIFIED
    NOT SPECIFIED
    3
    O-PBCY-T3
    COMMERCIAL
    1
    SINGLE
    625mW
    SWITCHING
    NPN
    NPN
    120 @ 2mA 1V
    50nA ICBO
    300mV @ 5mA, 50mA
    25V
    200mA
    300MHz
    300MHz
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2N4117A-E3
    2N4117A-E3
    Vishay Siliconix
    Through Hole
    TO-206AF, TO-72-4 Metal Can
    -
    SILICON
    -55°C~175°C TJ
    Bulk
    -
    Obsolete
    1 (Unlimited)
    4
    Matte Tin (Sn)
    BOTTOM
    -
    -
    8
    O-MBCY-W4
    -
    1
    -
    -
    AMPLIFIER
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Through Hole
    3
    2009
    e3
    EAR99
    Other Transistors
    300mW
    WIRE
    Single
    DEPLETION MODE
    300mW
    N-Channel
    3pF @ 10V
    -70V
    -40V
    JUNCTION
    1.5 pF
    30μA @ 10V
    600mV @ 1nA
    40V
    Unknown
    No
    Lead Free
    -
    2N4124G vs 2N4117A-E3
  • 2N4117A
    2N4117A
    Fairchild/Micross Components
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    unknown
    2N4124G vs 2N4117A
  • 2N4125BU
    2N4125BU
    Fairchild/ON Semiconductor
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    NO
    SILICON
    -55°C~150°C TJ
    Bulk
    yes
    Obsolete
    1 (Unlimited)
    3
    MATTE TIN
    BOTTOM
    NOT APPLICABLE
    NOT APPLICABLE
    3
    O-PBCY-T3
    COMMERCIAL
    1
    SINGLE
    625mW
    SWITCHING
    PNP
    PNP
    50 @ 2mA 1V
    50nA ICBO
    400mV @ 5mA, 50mA
    30V
    200mA
    -
    -
    ROHS3 Compliant
    -
    -
    -
    e3
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    unknown
    2N4124G vs 2N4125BU
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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