SEME-LAB 2N2907
- Part Number:
- 2N2907
- Manufacturer:
- SEME-LAB
- Ventron No:
- 5642579-2N2907
- Description:
- Bipolar PNP Device in a Hermetically sealed TO18 Metal Package
- ECAD Model:
-
- Datasheet:
- 2N/FTSO/PN NPN Type (10p) 2N290(5,7)
The 2N2907 is Bipolar PNP Device in a Hermetically sealed TO18 Metal Package , it is part of series. they are designed to work as Modules.2N2907 with pin details manufactured by SEME-LAB. The 2N2907 is available in Package,it is part of the electronic component Chips.that includes Series. they are designed to operate as Modules.it is with Operating Temperature .2N2907 with original stock manufactured by SEME-LAB. The 2N2907 is available in Package.Generally IC chips offer Mounting Style features such as SMD/SMT, Package Case of 2N2907is designed to work in , it's Operating Temperature is .The 2N2907 is available in Package, is part of the Modules and belong to Discrete Semiconductor Products.2N2907 with EDA / CAD Models manufactured by SEME-LAB. The 2N2907 is available in Package, is part of the Discrete Semiconductor Products.The 2N2907 is Modules with package manufactured by SEME-LAB. The 2N2907 is available in Package, is part of the Bipolar PNP Device in a Hermetically sealed TO18 Metal Package.
2N2907 More Descriptions
Bipolar (Bjt) Single Transistor, Pnp, 40 V, 400 Mw, 600 Ma, 100 Rohs Compliant: Yes |Multicomp Pro 2N2907
Transistor, PNP, TO-18; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:200MHz; Power Dissipation Pd:400mW;
TRANSISTOR, PNP, TO-18; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -40V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 400mW; DC Collector Current: 600mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-18; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 400mV; Continuous Collector Current Ic Max: 600mA; Current Ic @ Vce Sat: 150mA; Current Ic Continuous a Max: 600mA; Current Ic hFE: 150mA; Fall Time @ Ic: 100ns; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 200MHz; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 100; No. of Transistors: 1; Operating Temperature Min: -65°C; Pin Configuration: a; Power Dissipation Ptot Max: 600mW; Voltage Vcbo: 50V
Transistor, PNP, TO-18; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:200MHz; Power Dissipation Pd:400mW;
TRANSISTOR, PNP, TO-18; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -40V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 400mW; DC Collector Current: 600mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-18; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 400mV; Continuous Collector Current Ic Max: 600mA; Current Ic @ Vce Sat: 150mA; Current Ic Continuous a Max: 600mA; Current Ic hFE: 150mA; Fall Time @ Ic: 100ns; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 200MHz; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 100; No. of Transistors: 1; Operating Temperature Min: -65°C; Pin Configuration: a; Power Dissipation Ptot Max: 600mW; Voltage Vcbo: 50V
-
DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APP
-
DUAL HIGH SPEED, MEDIUM POWER PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUN
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
01 February 2024
L7812CV Voltage Regulator: Internal Structure, Characteristics, Specifications and Other Details
Ⅰ. L7812CV descriptionⅡ. Internal structure and working principle of L7812CVⅢ. Pin configuration of L7812CVⅣ. What are the characteristics of L7812CV?Ⅴ. How to judge the quality of L7812CV?Ⅵ. Specifications... -
01 February 2024
REF3030AIDBZR Specifications, Symbol, Applications and REF3030AIDBZR vs REF3030AIDBZT
Ⅰ. Overview of REF3030AIDBZRⅡ. Specifications of REF3030AIDBZRⅢ. Symbol, footprint and pin configuration of REF3030AIDBZRⅣ. Features of REF3030AIDBZRⅤ. In which applications can we use REF3030AIDBZR?Ⅵ. What is the difference... -
02 February 2024
TL431AIDBZR Shunt Regulator Replacements, Working Principle, Typical Characteristics, Performance and Function
Ⅰ. Description of TL431AIDBZRⅡ. How does TL431AIDBZR work?Ⅲ. Typical characteristics of TL431AIDBZRⅣ. Performance of TL431AIDBZRⅤ. Specifications of TL431AIDBZRⅥ. How to adjust the output voltage of TL431AIDBZR?Ⅶ. Absolute maximum... -
02 February 2024
BQ7694003DBTR: Technical Parameters, Applications, Layout Guidelines and More
Ⅰ. Overview of BQ7694003DBTRⅡ. Technical parameters of BQ7694003DBTRⅢ. Functional block diagram of BQ7694003DBTRⅣ. Where is BQ7694003DBTR used?Ⅴ. BQ7694003DBTR layout guidelinesⅥ. How does BQ7694003DBTR achieve the balance and protection...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.