Part Number: MRF6V13250HSR5 vs MRF6S19140HR3
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Part Number: | MRF6V13250HSR5 | MRF6S19140HR3 |
Manufacturer: | NXP USA Inc. | NXP USA Inc. |
Description: | FET RF 120V 1.3GHZ NI780S | FET RF 68V 1.99GHZ NI-880 |
Quantity Available: | Available | Available |
Datasheets: | - | MRF6S19140H |
Factory Lead Time | 10 Weeks | - |
Package / Case | NI-780S | NI-880 |
Surface Mount | YES | - |
Transistor Element Material | SILICON | - |
Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
Published | 2011 | 2007 |
Part Status | Active | Obsolete |
Moisture Sensitivity Level (MSL) | Not Applicable | 3 (168 Hours) |
Number of Terminations | 2 | - |
ECCN Code | EAR99 | EAR99 |
Voltage - Rated | 120V | 68V |
HTS Code | 8541.29.00.75 | - |
Subcategory | FET General Purpose Power | - |
Terminal Position | DUAL | - |
Terminal Form | FLAT | - |
Peak Reflow Temperature (Cel) | 260 | - |
Frequency | 1.3GHz | 1.93GHz~1.99GHz |
Time@Peak Reflow Temperature-Max (s) | 40 | - |
Base Part Number | MRF6V13250 | MRF6S19140 |
JESD-30 Code | R-CDFP-F2 | - |
Qualification Status | Not Qualified | - |
Operating Temperature (Max) | 225°C | - |
Number of Elements | 1 | - |
Configuration | SINGLE | - |
Operating Mode | ENHANCEMENT MODE | - |
Case Connection | SOURCE | - |
Current - Test | 100mA | 1.15A |
Transistor Application | AMPLIFIER | - |
Polarity/Channel Type | N-CHANNEL | - |
Transistor Type | LDMOS | LDMOS |
Gain | 22.7dB | 16dB |
DS Breakdown Voltage-Min | 120V | - |
Power - Output | 250W | 29W |
FET Technology | METAL-OXIDE SEMICONDUCTOR | - |
Power Dissipation-Max (Abs) | 476W | - |
Voltage - Test | 50V | 28V |
RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
Submit RFQ: | Submit | Submit |