Part Number: MRF6V13250HSR5 vs MRF6S19140HR3

Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product!
Part Number: MRF6V13250HSR5 MRF6S19140HR3
Manufacturer: NXP USA Inc. NXP USA Inc.
Description: FET RF 120V 1.3GHZ NI780S FET RF 68V 1.99GHZ NI-880
Quantity Available: Available Available
Datasheets: - MRF6S19140H
Factory Lead Time 10 Weeks -
Package / Case NI-780S NI-880
Surface Mount YES -
Transistor Element Material SILICON -
Packaging Tape & Reel (TR) Tape & Reel (TR)
Published 2011 2007
Part Status Active Obsolete
Moisture Sensitivity Level (MSL) Not Applicable 3 (168 Hours)
Number of Terminations 2 -
ECCN Code EAR99 EAR99
Voltage - Rated 120V 68V
HTS Code 8541.29.00.75 -
Subcategory FET General Purpose Power -
Terminal Position DUAL -
Terminal Form FLAT -
Peak Reflow Temperature (Cel) 260 -
Frequency 1.3GHz 1.93GHz~1.99GHz
Time@Peak Reflow Temperature-Max (s) 40 -
Base Part Number MRF6V13250 MRF6S19140
JESD-30 Code R-CDFP-F2 -
Qualification Status Not Qualified -
Operating Temperature (Max) 225°C -
Number of Elements 1 -
Configuration SINGLE -
Operating Mode ENHANCEMENT MODE -
Case Connection SOURCE -
Current - Test 100mA 1.15A
Transistor Application AMPLIFIER -
Polarity/Channel Type N-CHANNEL -
Transistor Type LDMOS LDMOS
Gain 22.7dB 16dB
DS Breakdown Voltage-Min 120V -
Power - Output 250W 29W
FET Technology METAL-OXIDE SEMICONDUCTOR -
Power Dissipation-Max (Abs) 476W -
Voltage - Test 50V 28V
RoHS Status ROHS3 Compliant ROHS3 Compliant
Submit RFQ: Submit Submit